Low-temperature firing and microwave dielectric properties of Ca[(Li0.33Nb0.67)0.9Ti0.1]O3−δ ceramics with LiF addition

High rate performance of LiF modified LiFePO4/C cathode material

“…1 indicates that LiF modification can enhance the crystallinity of LiFePO 4 . LiF may act as flux during the chemical reaction process as indicated by previous research [41][42][43]. Fig.…”

A new temperature stable microwave dielectric with low-firing temperature in Bi2MoO6–TiO2 system

“…Recently, a number of material researchers have focused their research on lowering the sintering temperatures of microwave dielectric ceramics to meet the LTCC requirements. Three approaches are usually used to develop low-firing microwave dielectric ceramics: (a) addition of oxides or glass with low melting temperature [4][5][6][7][8][9][10][11], such as V 2 O 5 , CuO, LiF, and B 2 O 3 ; (b) utilization of ultra-fine particles for raw materials [12,13]; (c) development of novel glass-free low-firing dielectric ceramics, including Bi 2 O 3 -TeO 2 , TiO 2 -TeO 2 , CaO-TeO 2 , BaO-TeO 2 , ZnO-TeO 2 binary systems, BaO-TiO 2 -TeO 2 ternary system, and Bi 2 W 2 O 9 systems [14][15][16][17][18][19][20][21]. Our recent research [22] showed that Bi 2 O 3 -MoO 3 binary system is a new ultra-low-firing microwave dielectric material.…”

Microwave dielectric properties and low temperature sintering of Ba3Ti4−x(Mg1/3Nb2/3)xNb4O21 ceramics with BaCu(B2O5) addition

“…The critical requirements for LTCC materials are low sintering temperature (below 960°C), good microwave dielectric properties, as well as excellent chemical compatibility with electrode materials [1]. Several microwave dielectric ceramic systems, including ZnNb 2 O 6 , MgO-TiO 2 , BaO-TiO 2 , Ca[(Li 1/3 Nb 2/3 ), Ti]O 3-d , Li 2 O-Nb 2 O 5 -TiO 2 and BaO-Ln 2 O 3 -TiO 2 (Ln = La, Nd, Sm) system have been reported for applications using low-melting glass frits or oxides [2][3][4][5][6][7]. However, among the reported LTCC systems, the mid-permittivity LTCC materials with high dielectric constant (e r C 45) and high Q 9 f (Q 9 fC10, 000 GHz) value are few because high e r values usually cause high dielectric loss.…”