Low-temperature ferromagnetism in a new diluted magnetic semiconductor Bi2−x FexTe3

Kulbachinskii, V.A.; Kaminskii, A. Yu.; Kindo, Koichi; Narumi, Yasuo; Suga, K.; Lošťák, P.; Švanda, Pavel

doi:10.1134/1.1378118

Cited by 48 publications

(24 citation statements)

References 14 publications

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“…Some of these compounds have already been studied as possible candidates for spintronics applications [13][14][15][16][17][18][19][20][21][22][23]. Most of the experiments were done on single crystals with a maximal dopant concentration of x = 0.1.…”

Section: Introductionmentioning

confidence: 99%

“…Most of the experiments were done on single crystals with a maximal dopant concentration of x = 0.1. Stable ferromagnetic order was observed in chalcogenides doped with vanadium and chromium [13,15,17], while samples doped with manganese were found to be either ferromagnetic at * mgarcia@mpi-halle.de † aernst@mpi-halle.de very low temperatures or antiferromagnetic and paramagnetic depending on experimental conditions and sample preparation [14,16,[21][22][23] [19,20]. The great interest in breaking time-reversal symmetry in topological insulators motivated further investigations of magnetic impurities located in particular at the surfaces of tetradymite chalcogenides [23][24][25][26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

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Exchange interaction and its tuning in magnetic binary chalcogenides

et al. 2014

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Using a first-principles Green's function approach we study magnetic properties of the magnetic binary tetradymite chalcogenides Bi 2 Se 3 , Bi 2 Te 3 , and Sb 2 Te 3 . The magnetic coupling between transition-metal impurities is long range, extends beyond a quintuple layer, and decreases with increasing number of d electrons per 3d atom. We find two main mechanisms for the magnetic interaction in these materials: the indirect exchange interaction mediated by free carriers and the indirect interaction between magnetic moments via chalcogen atoms. The calculated Curie temperatures of these systems are in good agreement with available experimental data. Our results provide deep insight into exchange interactions in magnetic binary tetradymite chalcogenides and open a way to design new materials for promising applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Exchange interaction and its tuning in magnetic binary chalcogenides

et al. 2014

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“…We note that previous studies reported temperature-independent diamagnetism in Bi 2 Se 3 . 21,24 As the increasing magnetization at low temperature often points to the presence of magneticimpurities, we wanted to identify the cause of the weak temperature dependence and to investigate the local magnetism in our low-defect Bi 2 Se 3 sample #3. We performed the 209 Bi NMR measurements at three different temperatures, 4.2 K, 40 K, and 120 K (Inset of Fig.…”

mentioning

confidence: 99%

Probing the bulk electronic states of Bi2Se3using nuclear magnetic resonance

Young

Lai

et al. 2012

Phys. Rev. B

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We report a nuclear magnetic resonance (NMR) study of Bi2Se3 single crystals grown by three different methods. All the crystals show 9 well-resolved peaks in their 209 Bi NMR spectra of the nuclear quadrupolar splitting, albeit with an intensity anomaly. Spectra at different crystal orientations confirm that all the peaks are purely from the nuclear quadrupolar effect, with no other hidden peaks. We identify the short nuclear transverse relaxation time (T2) effect as the main cause of the intensity anomaly. We also show that the 209 Bi signal originates exclusively from bulk, while the contribution from the topological surface states is too weak to be detected by NMR. However, the bulk electronic structure in these single crystals is not the same, as identified by the NMR frequency shift and nuclear spin-lattice relaxation rate (1/T1). The difference is caused by the different structural defect levels. We find that the frequency shift and 1/T1 are smaller in samples with fewer defects and a lower carrier concentration. Also, the low temperature power law of the temperature-dependent 1/T1 (∝ T α ) changes from the Korringa behavior α = 1 in a highly degenerate semiconductor (where the electrons obey Fermi statistics) to α < 1 in a less degenerate semiconductor (where the electrons obey Boltzmann statistics).2

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“…From recent experiments in magnetic topological insulators such as Cr or Fe doped (Bi, Sb) 2 Te 3 , people observed that these magnetic dopants can be ferromagnetically ordered at temperature of order 100 K. [47][48][49][50] The corresponding effective exchange field strength M z can be estimated as large as 0.2 eV with 10% doping 19,34 and thus strongly indicates the feasibility of our scenario. To roughly estimate what the largest Chern number could be achieved, one can simply count how many quantum well states (subbands), labeled x, are able to be inverted by applying M z .…”

Section: B Toward Higher Chern Numbermentioning

confidence: 92%

Quantum anomalous Hall effect with field-tunable Chern number nearZ2topological critical point

et al. 2015

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We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material, TlBi(S 1−δ Se δ )2, we demonstrate that the QAH phases with different Chern numbers can be achieved by means of tuning the exchange field strength or the sample thickness near the Z2 topological critical point. Our physics scenario successfully reduces the necessary exchange coupling strength for a targeted Chern number. This QAH mechanism differs from the traditional QAH picture with a magnetic topological insulating thin film, where the "surface" states must involve and sometimes complicate the realization issue. Furthermore, we find that a given Chern number can also be tuned by a perpendicular electric field, which naturally occurs when a substrate is present.

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Low-temperature ferromagnetism in a new diluted magnetic semiconductor Bi2−x FexTe3

Cited by 48 publications

References 14 publications

Exchange interaction and its tuning in magnetic binary chalcogenides

Exchange interaction and its tuning in magnetic binary chalcogenides

Probing the bulk electronic states of Bi2Se3using nuclear magnetic resonance

Quantum anomalous Hall effect with field-tunable Chern number nearZ2topological critical point

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