Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

“…We calculated the residual stress using relation (1). An annealing time of 30 min resulted in the highest residual stress of 375 MPa.…”

“…The crystallization of amorphous silicon (a-Si) into polycrystalline silicon (poly-Si) on a glass substrate is an attractive technique for use in the fabrication of thin film transistors (TFTs), which are employed in a variety of display devices, including active matrix displays (AMLCDs) and organic light-emitting diodes (OLEDs) [1][2][3][4]. Among the advantages of using poly-Si in TFTs is the structure uniformity of the display device and the relatively high switching speed that can be achieved because of the material's higher channel mobility.…”

Hot-carrier stress induced degradation of SLS ELA polysilicon TFTs – Effects of gate width variation and device orientation

“…Low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) have attracted much interest because of the possibility to be widely used for large and weightless flat panel display applications and especially for integrating driving circuits and pixel elements on a common substrate, realizing the system on a panel (SOP) [1]. Compared with conventional amorphous-Si TFTs, they have many advantages, such as higher field-effect mobility and therefore higher drive current.…”

Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

“…1,2 Since poly-Si TFTs require glass substrates, intensive studies have been carried out to lower the crystallization temperature of Si films. For this purpose, two major methods have been used: the direct deposition of poly-Si and the deposition of amorphous silicon (a-Si) followed by thermal crystallization.…”