Low-temperature electron mobility in a δ-doped semiconductor

González, L. R.; Krupski, J.; Szwacka, T.

doi:10.1103/physrevb.49.11111

Cited by 32 publications

(37 citation statements)

References 32 publications

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“…In contrast, transport mobility calculations in the RPA are hampered by a consistent overestimation of the predicted mobilities when compared to experimental results. 3,7,17 However, fairly accurate results for the transport mobility can be obtained by adopting an empirical scaling factor of about 2.…”

Section: Resultsmentioning

confidence: 99%

“…We will not give the explicit form for the RPA dielectric response matrix as it has previously been presented in the literature. 16,17 Using the dielectric response matrix to describe the scattering potential, it follows directly from Fermi's golden rule that the scattering rate per unit angle for a transition ͉n,k͘ →͉nЈ,kЈ͘ in a ␦-doped system is given by…”

Section: B Impurity Scattering In Heterostructuresmentioning

confidence: 99%

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Theoretical and experimental investigation of doped-channelp-type quantum wells

et al. 2000

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The influence of ionized impurity scattering on the hole mobility in ␦-doped-channel AlGaAs-InGaAs quantum wells is investigated. Improvements by a factor of 2.5 were observed experimentally when moving a ␦-doped impurity plane across the quantum well towards an interface, highlighting the scope of selective doping and wave-function engineering techniques to enhance the transport mobility of such devices. Theoretical hole mobility calculations were performed and reveal an overestimation of the transport mobility, common to the random-phase approximation ͑RPA͒, that is much stronger for p-type structures than for n-type structures. This effect is partially attributed to an underestimation of the screening charge distribution width. Using a lower limit for this distribution of around 50 Å, it is shown that the RPA can provide accurate predictions between samples with different impurity distributions and densities.

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Section: Resultsmentioning

confidence: 99%

Section: B Impurity Scattering In Heterostructuresmentioning

confidence: 99%

Theoretical and experimental investigation of doped-channelp-type quantum wells

et al. 2000

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“…The quantum mobility is limited by the scattering at ionised Sn impurities [18][19][20]. Following Ref.…”

Section: Analysis and Discussionmentioning

confidence: 99%

“…Following Ref. [18][19][20] we have calculated the quantum mobility, µ q calc , including multiple subband scattering. The screening of the Coulomb scattering potential was taken into account within the random-phase approximation [19].…”

Section: Analysis and Discussionmentioning

confidence: 99%

Sn delta-doping in GaAs

Kulbachinskii

Кытин

Lunin

et al. 1999

Semicond. Sci. Technol.

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We have prepared a number of GaAs structures δ-doped by Sn using the well known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterized by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other δ-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4 × 10 13 cm −2 . For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the δ-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. This calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated.

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“…17 In the absence of the spatial correlations of the charged impurities, the value of the structure factor s(q ʈ ) is equal to 1. This describes a random distribution of the charges which is the same as that of the dopants.…”

Section: Mobility Calculationsmentioning

confidence: 99%

Electron mobility in Si δ-doped GaAs with spatial correlationsin the distribution of charged impurities

et al. 1997

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We present a theoretical study of electron mobility in heavily Si ␦-doped GaAs in the presence of applied hydrostatic pressure. At low temperature the electron-ionized impurity scattering is the most important scattering mechanism. The presence of DX centers in Si-doped GaAs results in spatial correlations of the charged impurities, which increase the electron mobility through the structure factor of the charged-impurity distribution and/or a decrease in the density of the charged dopants. A Monte Carlo approach has been developed to simulate this distribution in two dimensions for the d ϩ /DX 0 and d ϩ /DX Ϫ models. In the mobility calculation, both intrasubband and intersubband scatterings are considered with the electron-electron screening within the random-phase approximation. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically. In cooperation with other mechanisms, e.g., self-compensation of Si dopants, in the ␦ layer, both DX-center models can explain the experimental results well. This indicates that in order to effectively study the electronic properties of DX centers via the electron mobility in ␦-doped structures, the samples must have a relatively low doping concentration in order to prevent self-compensation. ͓S0163-1829͑97͒08616-5͔

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Low-temperature electron mobility in a δ-doped semiconductor

Cited by 32 publications

References 32 publications

Theoretical and experimental investigation of doped-channelp-type quantum wells

Theoretical and experimental investigation of doped-channelp-type quantum wells

Sn delta-doping in GaAs

Electron mobility in Si δ-doped GaAs with spatial correlationsin the distribution of charged impurities

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