Low-temperature electroluminescence from degenerately doped GaAs diodes

Abstract

A model for low temperature electroluminescence from degenerately doped GaAs diodes is presented. Recombination of electrons injected into an exponential donor tail occurs with holes near the edge of the valence band in the p‐region. The effects of a decrease in the quasi‐Fermi level with distance from the p‐n junction and a hole band of finite width are incorporated in this work. The emission line shape is derived and found to be in good agreement with experimental results.