Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications

Yeo, Seungmin; Nandi, Dip K.; Rahul, R.; Kim, Tae Hyun; Shong, Bonggeun; Jang, Yujin; Bae, Jong Seong; Han, Jeong Woo; Kim, Soo Hyun; Kim, Hyungjun

doi:10.1016/j.apsusc.2018.07.210

Cited by 44 publications

(44 citation statements)

References 48 publications

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“…WF6 does not enable film growth with H2S unless a H2 plasma pulse [43][44][45][46] is added before the H2S pulse or either a ZnS substrate or a ZnEt2 pulse [47][48][49] is applied. W(CO)6 can be used to deposit amorphous or nanocrystalline WS2 films with either H2S 50,51 or H2S plasma 52 reactants. The use of WCl5 with H2S has also been claimed, but very limited information is available about the precursor as well as the process and its ALD characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…The use of WCl5 with H2S has also been claimed, but very limited information is available about the precursor as well as the process and its ALD characteristics. 53 Furthermore, in many cases the ALD WS2 films have been tens to hundreds of nm in thicknessindeed, in addition to the WCl5+H2S process, ultrathin (<10 nm) films have only been deposited by the W(CO)6+H2S plasma 52 and WF6+H2 plasma+H2S [43][44][45][46] PEALD processes operated at 350 and 250-450 °C, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing

Mattinen

Hatanpää

King

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Tungsten disulfide (WS2) is a semiconducting 2D material, which is gaining increasing attention in the wake of graphene and MoS2 owing to its exciting properties and promising performance in a multitude of applications. Herein, we deposited WSx thin films by atomic layer deposition (ALD) using W2(NMe2)6 and H2S as precursors. The films deposited at 150 °C were amorphous and sulfur deficient. The amorphous films crystallized as WS2 by mild post-deposition annealing in H2S/N2 atmosphere at 400 °C. Detailed structural characterization using Raman spectroscopy, X-ray diffraction, and transmission electron microscopy revealed that the annealed films consisted of small (<10 nm) disordered grains. Our approach enables deposition of continuous and smooth WS2 films down to a thickness of a few monolayers while retaining a low thermal budget compatible with potential applications in electronics as well as energy production and storage, for example.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing

Mattinen

Hatanpää

King

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…It could be observed from Figure a that the two characteristic peaks near 31.8 eV and 34.0 eV were attributed to W4f 7/2 and W4f 5/2 , respectively; the two peaks at 33.3 eV and 35.3 eV were derived from W 4f 7/2 and W4f 5/2 of W−O bond due to surface oxidation of the sample; the wide peak at 37.6 eV was belong to XPS spectrum of W5p. Figure b showed that the XPS spectra of S 2p 3/2 and S 2p 1/2 , and the two characteristic peaks were located at 161.5 eV and 162.8 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of Textured Tungsten Disulfide Nanosheets and their Catalysis for Benzylamine Coupling Reaction

2019

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Tungsten disulfide (WS 2 ) has a graphite-like structure with the properties of strippable and indirect/direct band gap conversion, which makes it have important applications in the fields of optoelectronics, catalysis and lubrication. Here, ultra-thin WS 2 nanosheets with texture on the surface were obtained by colloid synthesis method, and its phase, morphology and valence state were characterized. TEM images displayed that the obtained sample had flower-like morphology composed of "petal" nanosheets with several stripes on the surface. Interestingly, the fabricated WS 2 nanosheets exhibited excellent catalytic performance for the conversion of benzylamine with the yield reaching 97.9 % and excellent catalytic activity still being retained after 5 cycles of catalysis, and the WS 2 nanosheets also had good catalytic activity for coupling reactions of benzylamine homologues to synthesize corresponding imines. Besides, the coupling reaction could be done in natural light without the need for additional light and oxygen atmosphere at certain temperature. Further research showed that in our reaction system, the benzylamine oxidative coupling reaction was a photothermal co-catalytic process with thermal catalysis being dominant role and photocatalysis further improving the yield.

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“…Yeo et al [62] deposited a 1-cm-scale few-layer WS 2 on Si/SiO 2 using an organic tungsten precursor at 350 • C, with layer number varying with pulse number as with MoS 2 . Other efforts have been made to deposit tungsten precursor directly on Si/SiO 2 via ALD and then sulfurize to grow WS 2 , but we deem these efforts to fall outside the scope of true ALD growths because of the lack of sequential pulsing.…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Large area few-layer TMD film growths and their applications

2020

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Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono-and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.

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Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications

Cited by 44 publications

References 48 publications

Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing

Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing

Synthesis of Textured Tungsten Disulfide Nanosheets and their Catalysis for Benzylamine Coupling Reaction

Large area few-layer TMD film growths and their applications

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