Low-temperature diffusion of phosphorus in silicon

Gorban, Alexander N.; Gorodokin, Vladimir

doi:10.1007/bf00895983

Cited by 4 publications

(3 citation statements)

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“…However, many works have shown that P diffusion is remarkably enhanced under several conditions. For example, the diffusion is enhanced when the surface concentration of P exceeds a value of n s ∼ 1 × 10 20 cm −3 – (as in the present study). This high surface concentration leads to an apparent “kink” in the dopants profile which is a result of dissociation of P + V = ion pairs, causing an enhanced diffusion in the form of a “tail” .…”

supporting

confidence: 77%

Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires

2010

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We have measured the radial distribution and diffusion of active dopant atoms in individual silicon nanowires grown by the vapor-liquid-solid (VLS) method. Our method is based on successive surface etching of a portion of a contacted nanowire, followed by measurement of the potential difference between the etched and unetched areas using Kelvin probe force microscopy (KPFM). The radial dopant distribution is obtained by fitting the measured potentials with a three-dimensional solution of Poisson equation. We find that the radial active dopant distribution decreases by almost 2 orders of magnitude from the wire surface to its core even when there is no indication for tapering. In addition, the dopant profile is consistent with a very large diffusion coefficient of D ∼ 1 × 10 -19 m 2 s -1 . This implies that phosphorus (P) diffusion during the VLS growth is remarkably high and subsequent thermal annealing must be used when a homogeneous dopant distribution is required.

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confidence: 77%

Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires

2010

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“…However, many works have shown that P diffusion is remarkably enhanced under several conditions. For example, the diffusion is enhanced when the surface concentration of P exceeds a value of n s ~1x10 20 cm -3 (Matsumot.S, Yoshida et al 1974;F.F.Y.Wang 1981;Gorban and Gorodokin 1988) (as in the present study). This high surface concentration leads to an apparent "kink" in the dopant profile which is a result of dissociation of P + V = ion pairs, causing an enhanced diffusion in the form of a "tail" (Schwettmann and Kendall 1972).…”

mentioning

confidence: 68%

Nano-Scale Measurements of Dopants and Electronic Impurities in Individual Silicon Nanowires Using Kelvin Probe Force Microscopy

Koren¹,

Allen²,

Givan³

et al. 2011

Nanowires - Implementations and Applications

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“…Various techniques, such as thermal diffusion, ion transplantation, neutron transmutation doping (NTD), etc. [3][4][5][6][7][8][9][10][11][12] can be used for doping silicon. The significant advantage of the NTD process is to provide the required uniformity of doping with phosphorus, which results in obtaining a final product with the specified homogeneous electrical resistivity.…”

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confidence: 99%

Neutron Transmutation Doping of Thin Silicon Films Electrodeposited from the KF-KCl-KI-K₂SiF₆ Melt

Исаков

Khvostov

Kinev

et al. 2020

J. Electrochem. Soc.

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Neutron transmutation doping (NTD) was applied to produce a stable isotope 31P admixture in thin silicon films electrodeposited on glassy carbon (GC) from the KF-KCl (2:1)—75 mol% KI—0.5 mol% K2SiF6 melt. The irradiation of samples with 5 and 15 μm silicon film thickness was carried out under the neutron flux density of 1.46 × 1012 cm–2 s–1 for 168 h at 318 K in the IVV-2M research reactor (RR). The irradiated samples were studied by methods of gamma-ray and mass spectrometry, scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM-EDS). Impurities the activities of which reach levels above the minimum significant ones (MSA) were detected and identified. The presence of 31P atoms (∼1.1 × 1014 cm–3) in thin silicon films after the NTD process was confirmed. The specific electrical resistance of the irradiated samples was evaluated. Arrangements were defined to optimize the NTD process for obtaining acceptable results, including a higher 31P concentration and lower exposure time to achieve the minimum significant specific activity (MSSA).

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Low-temperature diffusion of phosphorus in silicon

Cited by 4 publications

References 3 publications

Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires

Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires

Nano-Scale Measurements of Dopants and Electronic Impurities in Individual Silicon Nanowires Using Kelvin Probe Force Microscopy

Neutron Transmutation Doping of Thin Silicon Films Electrodeposited from the KF-KCl-KI-K₂SiF₆ Melt

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Low-temperature diffusion of phosphorus in silicon

Cited by 4 publications

References 3 publications

Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires

Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires

Nano-Scale Measurements of Dopants and Electronic Impurities in Individual Silicon Nanowires Using Kelvin Probe Force Microscopy

Neutron Transmutation Doping of Thin Silicon Films Electrodeposited from the KF-KCl-KI-K2SiF6 Melt

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Neutron Transmutation Doping of Thin Silicon Films Electrodeposited from the KF-KCl-KI-K₂SiF₆ Melt