Low temperature dielectric relaxation and charged defects in ferroelectric thin films

Artemenko, Alla; Payan, Sandrine; Rousseau, Anthony; Levasseur, D.; Arveux, Emmanuel; Guégan, Guillaume; Maglione, Mario

doi:10.1063/1.4802242

Cited by 6 publications

(4 citation statements)

References 21 publications

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“…Only when this unwanted defect level could be brought to the sub-10ppm range could the influence of controlled defects (like Co 4+ ) be investigated. [25][26][27] Extended X-ray Absorption Fine Structure (EXAFS) have also long been applied to ferroelectric materials. 24 Emphasis was brought on polaron formation linking the electronic excitations needed for large non-linear coefficients with the lattice polarizability which is a key figure of ferroelectrics.…”

Section: Correlation Between Macroscopic and Local Propertiesmentioning

confidence: 99%

“…20,24 Because of its unique detection ability, EPR was also successfully used in thin films, showing that Ti 3+ polarons lead to low temperature dielectric relaxation similar to the one reported a long time ago in bulk perovskites. [25][26][27] Extended X-ray Absorption Fine Structure (EXAFS) has also long been applied to ferroelectric materials. 28 Local offcentring of even isovalent impurities has been shown to contribute largely to the dielectric permittivity and its dispersion dynamics versus frequency.…”

Section: Correlation Between Macroscopic and Local Propertiesmentioning

confidence: 99%

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Defect chemistry in ferroelectric perovskites: long standing issues and recent advances

et al. 2015

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Accurate control of residual defect density is required for reliable investigation and use of ferroelectric materials. After reviewing the long term endeavor to decrease defect contributions in bulk materials, which reached mass production decades ago, recent challenges are underlined. These mostly result from the continuous trend towards integration which has reached the nanometre range. The contribution of solid state chemistry is of key relevance for improving the present processing routes and suggesting alternative ones, for example by controlling a large density of charged defects to reach unprecedented functionalities. Some of these breakthroughs are reviewed.

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Section: Correlation Between Macroscopic and Local Propertiesmentioning

confidence: 99%

Section: Correlation Between Macroscopic and Local Propertiesmentioning

confidence: 99%

Defect chemistry in ferroelectric perovskites: long standing issues and recent advances

et al. 2015

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“…In contrast, the activation energy E g , which is considered as the minimum potential energy for polarons hopping to the neighbor site, is observed to decrease from 42.3 down to 17.6 meV. This implies that the size reduction by grinding process may introduce progressively defects into the lattice, and hence the hopping of polarons takes 12 place easier in such a rich defect medium [23]. In other word, the conduction bandwidth of manganites can be manipulated by the grinding.…”

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confidence: 56%

Influence of Grinding Particle Size on Structure and Electrical Properties of La_0.67Sr_0.33MnO_3−δCompound

Le-Van

Tang

et al. 2015

Materials and Manufacturing Processes

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In this paper, the influences of grinding particle size on the structure and electrical transport properties of La 0 . 67 Sr 033 MnO 3-,5 compound have been investigated. The compound was prepared by gel combustion process followed by grinding for different duration time. It was found that the lattice parameters, unit-cell volume, strain, oxygen deficiency, and temperature dependence of resistivity p-T increase with decreasing particle size. The p-T growth can be explained by the increasing contribution of the grain boundary effect, strain, and even oxygen deficiency. The electrical transport mechanism over the whole temperature range of 100-400 K was thoroughly described by applying the phase separation model around the phase transition temperature T P . This model was subsequently employed to calculate the p-T at high temperature up to 1000 K. The result showed there was a second phase transition at a typical temperature T*>T P , which could be attributed to the relaxation of small polarons to large ones. This relaxation occurred at lower temperatures when the particle size decreased. It might be due to the decrease in conduction bandwidth caused by the defects arisen during the grinding.

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“…78 Such interfaces being of great influence in thin films and multilayers, the resulting space charges are clearly evidenced in perovskite multilayers 79,80 while polarons also induce a low temperature relaxation. 81 …”

Section: Discussionmentioning

confidence: 99%

Free charge localization and effective dielectric permittivity in oxides

Maglione

2016

J. Adv. Dielect.

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This review will deal with several types of free charge localization in oxides and their consequences on the effective dielectric spectra of such materials. The first one is the polaronic localization at the unit cell scale on residual impurities in ferroelectric networks. The second one is the collective localization of free charge at macroscopic interfaces like surfaces, electrodes and grain boundaries in ceramics. Polarons have been observed in many oxide perovskites mostly when cations having several stable electronic configurations are present. In manganites, the density of such polarons is so high as to drive a net lattice of interacting polarons. On the other hand, in ferroelectric materials like BaTiO 3 and LiNbO 3 , the density of polarons is usually very small but they can influence strongly the macroscopic conductivity. The contribution of such polarons to the dielectric spectra of ferroelectric materials is described. Even residual impurities as for example Iron can induce well-defined anomalies at very low temperatures. This is mostly resulting from the interaction between localized polarons and the highly polarizable ferroelectric network in which they are embedded. The case of such residual polarons in SrTiO 3 will be described in more detail, emphasizing the quantum polaron state at liquid helium temperatures. Recently, several nonferroelectric oxides have been shown to display giant effective dielectric permittivity. It is first shown that the frequency/temperature behavior of such parameters is very similar in very different compounds (donor-doped BaTiO 3 , CaCu 3 Ti 4 O 12 , LuFe 2 O 4 , Li-doped NiO, etc.). This similarity calls for a common origin of the giant dielectric permittivity in these compounds. A space charge localization at macroscopic interfaces can be the key for such extremely high dielectric permittivity.

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Low temperature dielectric relaxation and charged defects in ferroelectric thin films

Cited by 6 publications

References 21 publications

Defect chemistry in ferroelectric perovskites: long standing issues and recent advances

Defect chemistry in ferroelectric perovskites: long standing issues and recent advances

Influence of Grinding Particle Size on Structure and Electrical Properties of La_0.67Sr_0.33MnO_3−δCompound

Free charge localization and effective dielectric permittivity in oxides

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Low temperature dielectric relaxation and charged defects in ferroelectric thin films

Cited by 6 publications

References 21 publications

Defect chemistry in ferroelectric perovskites: long standing issues and recent advances

Defect chemistry in ferroelectric perovskites: long standing issues and recent advances

Influence of Grinding Particle Size on Structure and Electrical Properties of La0.67Sr0.33MnO3−δCompound

Free charge localization and effective dielectric permittivity in oxides

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Product

Resources

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Influence of Grinding Particle Size on Structure and Electrical Properties of La_0.67Sr_0.33MnO_3−δCompound