Low temperature deposition of hexagonal BN films by chemical vapour deposition

Motojima, Seiji; Tamura, Yoshihiro; Sugiyama, Kohzo

doi:10.1016/0040-6090(82)90056-6

Cited by 61 publications

(33 citation statements)

References 10 publications

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“…However, the difficulty of synthesizing bulk single-crystal h-BN substrate forces us to grow h-BN epitaxial film on foreign substrates. During the past few decades, thin BN films have been deposited on silicon substrates by chemical vapor deposition (CVD) [1,2] and on copper substrate also by CVD [3]. However, there has been no report of a single-crystal h-BN heteroepitaxial film; either amorphous (a-BN) or turbostratic BN (t-BN) has been obtained.…”

Section: Introductionmentioning

confidence: 99%

Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE

Kobayashi

Akasaka

2008

Journal of Crystal Growth

106

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Section: Introductionmentioning

confidence: 99%

Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE

Kobayashi

Akasaka

2008

Journal of Crystal Growth

106

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“…Murarka et al [5] also deposited BN thin films by CVD with B 2 H 6 and NH 3 on (0 0 1) Si substrates; however, the crystal structure was also a-BN. Motojima et al [6] deposited BN on copper substrate by CVD with BCl 3 and NH 3 , and X-ray diffraction (XRD) revealed that the BN was also a-BN. The first metalorganic vapor phase epitaxy (MOVPE) BN growth using triethylboron (TEB) and NH 3 was reported by Nakamura [7].…”

Section: Introductionmentioning

confidence: 99%

Hexagonal boron nitride grown by MOVPE

Kobayashi¹,

Akasaka²,

Makimōto³

2008

Journal of Crystal Growth

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“…Boron nitride films have been prepared by chemical vapor deposition (CVD) using borontrichloride or diborane as source materials (1)(2)(3). Recently in the preparation of compound semiconductors, CVD using metalorganic compounds has been developed, and its achievements have become of major interest lately.…”

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confidence: 99%

Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition

Nakamura

1986

J. Electrochem. Soc.

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Boron nitride films have been deposited by a metal organic chemical vapor deposition (MO-CVD). The reaction between ammonia and triethylboron (B(C~H.0:~) is carried out in the temperature range of 750~176 with the molar ratio of NHJB(C2H.0:~ = 0-200. Colorless and transparent films are obtained at temperatures of 950~176with the molar ratio of 20-70. The composition of the films, N/B, is found to vary from 0.46 to 1.0. For a fixed NHJB(C.,H~):~, the deposition rate increases with temperature up to 1000~ and then decreases. The deposition rate shows an Arrhenius-type behavior in the temperature range of 750~176 X-ray diffraction studies indicate that the crystal structure of the films is hexagonal. The energy of the direct allowed transition, obtained from optical measurements, is estimated to be 5.90 eV.Several papers have been published describing the preparation of boron nitride films, the physical-and chemical properties, and the potential applications of those films. Boron nitride films have been prepared by chemical vapor deposition (CVD) using borontrichloride or diborane as source materials (1-3). Recently in the preparation of compound semiconductors, CVD using metalorganic compounds has been developed, and its achievements have become of major interest lately. This method, called MOCVD, has been developed with reference to the deposition of GaAs by Manasevit (4) in 1968, and a number of related papers have been reported mainly for the growth of III-V compound semiconductors (5-7).In a previous paper (8), we reported on the amorphous boron nitride films deposited by the molecular flow chemical vapor deposition (MFCVD), by which we could control the composition easily. In this paper, we report the preparation and properties of boron nitride films deposited using triethylboron and ammonia by MOCVD. ExperimentsTriethylboron (TEB, Arfa Products, 98%); ammonia (99.9%), hydrogen (99.999%), and argon (99.995%) were used to grow boron nitride films by CVD. Sapphire (12 • 12 • 0.6 mm 3) and silicon (12 x 12 • 0.25 mm 3) were used as substrates.The schematic diagram of the apparatus for the deposition of boron nitride is shown in Fig. 1. The fused quartz reaction tube has an inside diameter of 25 mm and is 600 mm long. Substrates were put on the substrate holder (sintered boron nitride) with slope of 20 ~ against the horizon and heated by external heating furnace. The substrate temperature was determined by a thermocouple attached at the rear of substrate holder.Trfethylboron was transported by bubbling hydrogen through the TEB. The temperature of the TEB saturator was controlled between 0 ~ and 25~ TEB is a colorless clear liquid, and is moisture and air sensitive and pyrohoric. The vapor pressure at 0~ is 12.5 torr (9). The flow of TEB was determined from the loss of TEB in the saturator. The preparation conditions of boron nitride films are summarized in Table I.The crystal structures of the deposited films were studied by x-ray diffraction. Optical transmission and reflection spectra of films deposited on sapph...

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Low temperature deposition of hexagonal BN films by chemical vapour deposition

Cited by 61 publications

References 10 publications

Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE

Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE

Hexagonal boron nitride grown by MOVPE

Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition

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