Low temperature coefficient of resistivity in antiperovskite Mn3Ga0.7Sn0.3N compound

Dai, Yongjuan; Wu, Xiangxiang; Guo, Dong; Sun, Zhonghua

doi:10.1007/s00339-022-05995-y

Cited by 1 publication

(1 citation statement)

References 31 publications

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“…[1][2][3][4][5] However, most materials raise or reduce DOI: 10.1002/smll.202311599 their resistivity due to temperaturedependent scattering events for carriers. Few materials, such as commercial Constantan or Manganin, [6] TiAl alloys, and Mn-based anti-perovskites, [7][8][9][10][11][12][13][14][15][16] exhibit the ZTCR feature as a result of the mean free path approaching the lower limit of the semiclassical Boltzmann theory, which is caused by the strong scattering of conducting electrons. [12,17] This limit generally occurs at high-temperatures because the rate of electron-phonon scattering (e-p scattering) has significantly increased.…”

Section: Introductionmentioning

confidence: 99%

A Delicate Balance Between Spin‐Wave Mediated Weak Localization and Electron‐Phonon Scattering in the Design of Zero Temperature Coefficient of Resistivity

Yuan,

Sun,

Guo

et al. 2024

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Zero thermal coefficients of resistivity (ZTCR) materials exhibit minimal changes in resistance with temperature variations, making them essential in modern advanced technologies. The current ZTCR materials, which are based on the resistivity saturation effect of heavy metals, tend to function at elevated temperatures because the mean free path approaches the lower limit of the semiclassical Boltzmann theory when the temperature is sufficiently high. ZTCR materials working at low‐temperatures are difficult to achieve due to electron‐phonon scattering, which results in increased resistivity according to Bloch's theory. In this work, the ZTCR behavior at low‐temperatures is realized in pre‐microstrained Mn3NiN. The delicate balance between the resistivity contribution from electron‐phonon scattering and spin‐wave mediated weak localization is well revealed. A remarkable temperature coefficient of resistivity (TCR) value as low as 1.9 ppm K−1 (50 K ≤ T ≤ 200 K) is obtained, which is significantly superior to the threshold value of ZTCR behavior and the application standard of commercial ZTCR materials. The demonstration provides a unique paradigm in the design of ZTCR materials through the contraction effects of two opposite conductance mechanisms with positive and negative thermal coefficients of resistivity.

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