Low-Temperature Catalytic Synthesis of Gallium Nitride Nanowires

Chang, Ko‐Wei; Wu, Jih‐Jen

doi:10.1021/jp026152t

Cited by 59 publications

(31 citation statements)

References 16 publications

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“…[32] The broad emission band shown in Figure 7 might be ascribed to the band edge emissions of both the hexagonal-structured GaN nanowires and the cubic-phase-structured GaN. [32] The cubic GaN structure could exist within the highly curved portion of the vermicular-like structures as stacking faults. [33] In addition, the emission band centered at 471 was suggested to be the contribution of the existence of defect or surface states.…”

Section: Resultsmentioning

confidence: 99%

Growth and Characterization of GaN Nanowires by NiCl2 Assisted Chemical Vapor Deposition

Wei

Shi

2011

Metall Mater Trans A

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Large-scale, high-density GaN nanowires were successfully synthesized on Si(111) substrates by the NiCl 2 assisted chemical vapor deposition (CVD) method, and their composition, microstructure, morphology, and optical properties were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), fourier transform infrared spectrophotometer (FTIR), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), and photoluminescence (PL). The results demonstrate that the nanowires are singlecrystal GaN with hexagonal wurtzite structure having the size of 20 to 50 nm in diameter with some nanodroplets on their tips, which reveals that the growth mechanism of GaN nanowires agrees with the vapor-liquid-solid (VLS) process. Two first-order Raman active phonon bands move to low shift and E 2 (high) and A 1 (LO) bands broaden, which is caused by size effect.

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Section: Resultsmentioning

confidence: 99%

Growth and Characterization of GaN Nanowires by NiCl2 Assisted Chemical Vapor Deposition

Wei

Shi

2011

Metall Mater Trans A

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“…In addition, it exhibits high thermal conductivity and little radiation damage, suitable for high temperature and high power microelectronic devices [15]. GaN nanowires have been synthesized by several groups using different methods [16][17][18][19][20][21][22]. The randomly oriented GaNWs used in this study were synthesized by a low pressure thermal chemical vapor deposition (LPTCVD) technique.…”

Section: Methodsmentioning

confidence: 99%

Low Temperature Phase Separation in Nanowires

Wu¹

2010

Nanowires

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“…Metal catalysts, such as Au, Ni, and Fe, are commonly used to initiate the growth of GaN nanorods. From the view of GaN nanorod purity, Au is commonly used as a metal catalyst in the VLS growth mechanism because of its considerably smaller rate of diffusion into the GaN lattice than other metal catalysts, such as Ni and Fe metal catalysts even though the liquid metals have a better solubility for Ga and N [12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%