The
ever-greater complexity of modern electronic devices requires
a larger chemical toolbox to support their fabrication. Here, we explore
the use of 1-nitropropane as a small molecule inhibitor (SMI) for
selective atomic layer deposition (ALD) on a combination of SiO2, Cu, CuO
x
, and Ru substrates.
Results using water contact angle goniometry, Auger electron spectroscopy,
and infrared spectroscopy show that 1-nitropropane selectively chemisorbs
to form a high-quality inhibition layer on Cu and CuO
x
at an optimized temperature of 100 °C, but
not on SiO2 and Ru. When tested against Al2O3 ALD, however, a single pulse of 1-nitropropane is insufficient
to block deposition on the Cu surface. Thus, a new multistep process
is developed for low-temperature Al2O3 ALD that
cycles through exposures of 1-nitropropane, an aluminum metalorganic
precursor, and coreactants H2O and O3, allowing
the SMI to be sequentially reapplied and etched. Four different Al
ALD precursors were investigated: trimethylaluminum (TMA), triethylaluminum
(TEA), tris(dimethylamido)aluminum (TDMAA), and dimethylaluminum isopropoxide
(DMAI). The resulting area-selective ALD process enables up to 50
cycles of Al2O3 ALD on Ru but not Cu, with 98.7%
selectivity using TEA, and up to 70 cycles at 97.4% selectivity using
DMAI. This work introduces a new class of SMI for selective ALD at
lower temperatures, which could expand selective growth schemes to
biological or organic substrates where temperature instability may
be a concern.