2018
DOI: 10.1016/j.elecom.2018.07.003
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Low temperature atomic layer deposited molybdenum nitride-Ni-foam composite: An electrode for efficient charge storage

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Cited by 23 publications
(19 citation statements)
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“…This observation was in good agreement with MoN x films that were deposited under similar conditions on either SiO 2 /Si or Ni-foam substrates. [21][22][23] Furthermore, the annealing in a H 2 atmosphere at 400 8C had a minimal influence on the phase of ALD-MoN x . However, the minor hump observed at 35-408 (Mo 2 N 111) was much clearer and apparent.…”
Section: Ald Of Monmentioning
confidence: 96%
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“…This observation was in good agreement with MoN x films that were deposited under similar conditions on either SiO 2 /Si or Ni-foam substrates. [21][22][23] Furthermore, the annealing in a H 2 atmosphere at 400 8C had a minimal influence on the phase of ALD-MoN x . However, the minor hump observed at 35-408 (Mo 2 N 111) was much clearer and apparent.…”
Section: Ald Of Monmentioning
confidence: 96%
“…The ALD technique is extensively used to grow various active compounds on different substrates for applications such as Cu diffusion barrier, energy storage devices, and electrocatalysis. [21][22][23][24][25][26][27][28] Recently, ALD has been explored as a fabrication technique for the preparation of various active materials on a highly porous substrate for application in fields such as Li-ion batteries and supercapacitor. [29][30][31][32][33] However, the deposition of MoN x on CC or NCCC has not been reported and studied as a catalyst for HER.…”
Section: Ald Of Monmentioning
confidence: 99%
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