Laser-Based Micro- And Nanoprocessing XIII 2019
DOI: 10.1117/12.2509141
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Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

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Cited by 1 publication
(2 citation statements)
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“…Thus, these results show that phosphorus and aluminum were incorporated into the Si film by laser irradiation. As previously reported, we actually observed the reflectance and melting condition of Si during irradiation by employing in-situ monitoring based on a 633 nm CW laser [11]. It is thought that laser doping is a phenomenon derived from the melting of Si, and complete melt of Si was seen at the fluence of 400 mJ/cm 2 .…”
Section: Resultssupporting
confidence: 67%
See 1 more Smart Citation
“…Thus, these results show that phosphorus and aluminum were incorporated into the Si film by laser irradiation. As previously reported, we actually observed the reflectance and melting condition of Si during irradiation by employing in-situ monitoring based on a 633 nm CW laser [11]. It is thought that laser doping is a phenomenon derived from the melting of Si, and complete melt of Si was seen at the fluence of 400 mJ/cm 2 .…”
Section: Resultssupporting
confidence: 67%
“…In our previous study, phosphorus was doped onto Si films immersed in H 3 PO 4 solution by laser doping, and a phosphorus concentration of over 10 19 cm −3 was confirmed [10]. Moreover, a H 3 PO 4 solution coating process was established to prevent the generation of bubbles, which led to optical scattering during irradiation [11]. In particular, formation of low-resistance in-source/drain contacts is required in TFTs for good electrical properties.…”
Section: Introductionmentioning
confidence: 97%