Low temperature (&amp;#x003C;180&amp;#x00B0;C) wafer-level and chip-level In-to-Cu and Cu-to-Cu bonding for 3D integration

Chien, Yu-San; Huang, Yi-Wen; Tzeng, Ruoh-Ning; Shy, Ming-Shaw; Lin, T.Y.; Chen, Kou-Hua; Chuang, Ching-Te; Hwang, Wei; Chiou, Jin-Chern; Chiu, Chi-Tsung; Tong, Ho‐Ming; Chen, Kuan‐Neng

doi:10.1109/ectc.2013.6575718

Cited by 8 publications

(6 citation statements)

References 17 publications

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“…Extra-high stress is not required to break down native oxides to form direct Au-Au bonding [8,9]. Therefore, Au, in combination with Cu interconnections, is the optimum metal for direct bonding, compared to other alternatives including Al, Ni, Ti, and Pd [10][11][12][13][14][15].…”

Section: Fabricationmentioning

confidence: 99%

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

Wang

Smet

Kobayashi³

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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This paper reports the first design and demonstration of a manufacturable 20 µm pitch Cu interconnection technology to ultra-thin glass interposers. Bonding is accomplished at temperatures below 200 o C without the need for solders. Manufacturability challenges such as substrate warpage, bump noncoplanarity and assembly throughput with low bonding times are addressed with this technology. The modeling and experimental results indicate that the ultra-fine pitch Cu interconnection offsets more than 3 µm non-coplanarity. Bonding interfaces were characterized to show that metallurgical bonding microstructure is formed even with a bonding time of 5 seconds, with superior electrical properties. A mechanism for low-temperature metallurgical bonding is proposed based on the characterization results.

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Section: Fabricationmentioning

confidence: 99%

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

Wang

Smet

Kobayashi³

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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“…Jin et al [24] observed the formation of Cu 7 In 3 and CuIn 4 IMCs at the interface of the Cu-In coating layer, consisting of 20 mm thick Cu and 810 μm thick Cu-In. Chien et al [25] investigated Cu-In bonding in 3D interconnects and found that the Cu 2 In and Cu 7 In 3 IMCs were formed at the joint at an annealing temperature of 443K.…”

Section: Introductionmentioning

confidence: 99%

“…In literature, there are numerous investigations on the interfacial interactions of Cu and In metals, and their evolution [17][18][19][20][21][22][23][24][25][26][27][28][29]. For example, Weibke and Eggers [17] were the first to discover that Cu 7 In 3 IMC can be formed at room temperature at a Cu-In diffusion couple as In concentrations are in the range of 28.9% to 30.7% after annealing.…”

Section: Introductionmentioning

confidence: 99%

First-principles density function calculations of physical properties of triclinic Cu7In3

Cheng

Chen

2016

2016 International Conference on Electronics Packaging (ICEP)

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First principles density functional theory calculations within the generalized gradient approximation are performed to comprehensively study the structural, elastic, electronic and thermodynamic properties of triclinic single and polycrystalline Cu7In3. The polycrystalline elastic properties are predicted using the Voigt-Reuss-Hill approximation and the thermodynamic properties are evaluated based on the quasi-harmonic Debye model. Their temperature, hydrostatic pressure or crystal orientation dependences are also addressed, and the predicted physical properties are compared with the literature experimental and theoretical data and also with those of three other Cu-In compounds, i.e., CuIn, Cu2In and Cu11In9.The present calculations show that in addition to being a much better conductor compared to Cu2In and Cu11In9, Cu7In3 crystal reveals weak elastic anisotropy, high ductility and low stiffness, and tends to become more elastically isotropic at very high hydrostatic pressure. Moreover, the Cu7In3 holds the largest high-temperature heat capacity among the four Cu-In compounds.

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“…Recently, copper to copper bonding technology has been fiercely pursued in C2W and W2W domains [3]. Copper to Copper bonding, compared to flip chip technique, can provide a more efficient heat dissipation mechanism.…”

Section: Introductionmentioning

confidence: 99%

Design of RF and thermal pads of CMOS PAs using copper to copper bonding technology

Hwang

Kuo

2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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Low temperature (<180°C) wafer-level and chip-level In-to-Cu and Cu-to-Cu bonding for 3D integration

Cited by 8 publications

References 17 publications

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

First-principles density function calculations of physical properties of triclinic Cu7In3

Design of RF and thermal pads of CMOS PAs using copper to copper bonding technology

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Low temperature (&#x003C;180&#x00B0;C) wafer-level and chip-level In-to-Cu and Cu-to-Cu bonding for 3D integration

Cited by 8 publications

References 17 publications

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 &#x03BC;m pitch

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 &#x03BC;m pitch

First-principles density function calculations of physical properties of triclinic Cu7In3

Design of RF and thermal pads of CMOS PAs using copper to copper bonding technology

Contact Info

Product

Resources

About

Low temperature (<180°C) wafer-level and chip-level In-to-Cu and Cu-to-Cu bonding for 3D integration

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch