Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Fonrodona, M.; Soler, D.; Escarré, Jordi; Villar, F.; Bertomeu, J.; Andreu, J.; Saboundji, Amar; Coulon, Nathalie; Mohammed-Brahim, T.

doi:10.1016/j.tsf.2005.07.217

Cited by 24 publications

(12 citation statements)

References 7 publications

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“…Hydrogenated nanocrystalline silicon (nc-Si:H)-based devices have been reported to be more stable than their amorphous (a-Si:H) counterparts. 7 Klein et al 8 have recently shown that microcrystalline silicon films grown at a high deposition rate could be obtained at a high deposition pressure, but the material quality decreased. In this study, good-quality intrinsic nanocrystalline silicon films have been deposited using the increase of the deposition pressure at deposition rates as high as 4.7 s -1 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

Halindintwali¹,

Knoesen²,

Swanepoel³

et al. 2010

S Afr J Sci

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Section: Introductionmentioning

confidence: 99%

Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

Halindintwali¹,

Knoesen²,

Swanepoel³

et al. 2010

S Afr J Sci

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“…Thus far, high field effect mobility has only been achieved in TFTs with SiO 2 , not a-SiN x :H. Reported mobilities are in the range of 11−150 cm 2 /(V . s) 4,6,[8][9][10][11] and 0.5−2 cm 2 /(V . s) 5,7,12 for SiO 2 and a-SiN x :H gate dielectrics, respectively.…”

Section: Tft Structure and Fabricationmentioning

confidence: 98%

Nanocrystalline Silicon Thin Film Transistors for High Performance Large Area Electronics

Esmaeili-Rad

LEE

Sazonov

et al. 2009

Selected Topics in Electronics and Systems

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Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) have potential for high-performance applications in large area electronics, such as next generation of flat panel displays and medical xray imagers, for pixel drivers, readout circuits, as well as complementary channel logic circuits for system-on-panel integration. This potential stems from reduced threshold voltage shift and higher transconductance, compared to amorphous silicon counterpart. In this paper, we discuss various TFT structures, their associated design and performance considerations, including leakage current and threshold voltage stability mechanisms.Keywords: Thin film transistor, Nanocrystalline silicon, off current, stability Recently, nanocrystalline silicon (nc-Si) TFTs have been proposed as a low cost, high performance alternative. 4-7 They have shown effective field-effect mobilities in the range 50-100 cm 2 V -1 s -1 ; their fabrication process is fully compatible with that of a-Si:H TFTs; they have demonstrated better stability under electrical stress than a-Si:H TFTs. 4-7 Research on nc-Si TFTs is still in its infancy. It is not clear what device structure yields 297 Frontiers in Electronics Downloaded from www.worldscientific.com by MONASH UNIVERSITY on 04/22/17. For personal use only. 1056 M. R. Esmaeili-Rad et al. Frontiers in Electronics Downloaded from www.worldscientific.com by MONASH UNIVERSITY on 04/22/17. For personal use only.

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“…Thus far, high field effect mobility has only been achieved in TFTs with SiO 2 , not a-SiN x :H. Reported mobilities are in the range of 11−150 cm 2 /(V . s) 4,6,[8][9][10][11] and 0.5−2 cm 2 /(V . s) 5 poly-Si and crystalline silicon transistors, too.…”

Section: Substratementioning

confidence: 98%

Nanocrystalline Silicon Thin Film Transistors for High Performance Large Area Electronics

Esmaeili-Rad

Lee

Sazonov

et al. 2008

Int. J. Hi. Spe. Ele. Syst.

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Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Cited by 24 publications

References 7 publications

Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

Nanocrystalline Silicon Thin Film Transistors for High Performance Large Area Electronics

Nanocrystalline Silicon Thin Film Transistors for High Performance Large Area Electronics

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