Low Temperature ALD MoN for Applications in Nanoscale Devices

Abstract

A low temperature plasma enhanced atomic layer deposition (ALD) process has been developed for the growth of ultra thin MoN films. An optimized process was identified by performing a systematic study of film growth rate as a function of Mo precursor pulse and purge times, N2 and H2 pulse time and heater temperature. Subsequent chemical and microstructural analysis shows that the as-deposited MoN film has a stoichiometric composition, a resistivity of 1280 mW, an atomically smooth surface and amorphous structure. Copper diffusion barrier performance measurements show that MoN films between 2.5 and 15 nm thick could prevent copper diffusion after a 1-hour anneal at 600{degree sign}C.