Low-temperature absorption spectrum in GaAs in the presence of optical pumping

Shah, Jagdeep; Leheny, R. F.; Wiegmann, W.

doi:10.1103/physrevb.16.1577

Cited by 117 publications

(21 citation statements)

References 7 publications

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“…The calculated, direct band gap, at the equilibrium lattice constant, is 1.520 eV, at the Г point. This result of 1.520 eV is in excellent agreement with the low temperature experimental value of 1.519 eV, reported by four different, experimental groups 6,[8][9][10]. Our calculated bulk modulus of 75.49 GPa also agrees with the experimental values of 75.5 and 74.7 GPa 56,58.…”

supporting

confidence: 91%

“…As per the content of this table, the consensus experimental band gap, at low temperature, is 1.519 eV. [8][9][10] Numerous theoretical results have been reported for the band gap of GaAs. Our focus on the band gap stems from its importance in describing several other properties of semiconductors [AIP Advances]; in particular, a wrong bang gap precludes agreements between peaks in the calculated densities of states, dielectric functions, and optical transition energies with their experimental counterparts.…”

Section: Introductionmentioning

confidence: 99%

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Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Diakite¹,

Traore²,

Malozovsky³

et al. 2017

JMP

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We report accurate, calculated electronic, transport, and bulk properties of zinc blende gallium arsenide (GaAs). Our ab-initio, non-relativistic, self-consistent calculations employed a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. We strictly followed the Bagayoko, Zhao, and William (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). Our calculated, direct band gap of 1.429 eV, at an experimental lattice constant of 5.65325 Å, is in excellent agreement with the experimental values. The calculated, total density of states data reproduced several experimentally determined peaks. We have predicted an equilibrium lattice constant, a bulk modulus, and a low temperature band gap of 5.632 Å, 75.49 GPa, and 1.520 eV, respectively. The latter two are in excellent agreement with corresponding, experimental values of 75.5 GPa (74.7 GPa) and 1.519 eV, respectively. This work underscores the capability of the local density approximation (LDA) to describe and to predict accurately properties of semiconductors, provided the calculations adhere to the conditions of validity of DFT.

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supporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Diakite¹,

Traore²,

Malozovsky³

et al. 2017

JMP

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“…1(a) are degenerate at G. A 1.580 eV direct band gap at G is obtained, in good agreement with experiment (i.e. 1.519 eV) at low temperature 34,35) . Same features of the VBs are also observed in HARPES 21) except for the splitting at G, which is D 0 ＝0.341±0.002 eV 23,24) .…”

Section: Gaas Bulksupporting

confidence: 87%

Symmetry Breaking-induced Band-splitting in GaAs Thin Film by First-principles Calculations

2017

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We investigated the band-splitting of GaAs thinˆlm by invoking broken inversion symmetry within the bulk region and the lost of 2D symmetry on the surface due to strain inˆrst-principles calculations using density functional theory with spin-orbit interaction. The system is modeled by unreconstructed GaAs(001)-(1×1) slab, and by its strained counterpart arising from As dimerization. For the unstrained system, we found that the valence bands split while the conduction bands remain degenerate. This degeneracy is attributed to the sole contribution of p-state of As atoms found on the surface to this band, where 2D symmetry is preserved. When strain is imposed on this surface, the symmetry is broken and the conduction bands are split. Thesê ndings identify the changes in the band structure due to broken symmetry, suggesting their incorporation in the conventional degenerate theoretical description of the GaAs thinˆlms done to date.

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“…The symbol n in Eq. Then, the system reduces to the following integro-differential equation for density p: : a[p(Z,t),hv]dZ) , (5) where <fJ(0,t) is the energy fiux at the excited surface. The term (nlc) [iJct>(x,t)/iJt] is negligible with respect to a [p(x,t),hvl4 '(x,t) in the first equation which can be integrated analytically.…”

Section: Nonlinear Propagation: Numerical Treatmentmentioning

confidence: 99%

Band-gap dynamics and nonlinear propagation of optical pulses in CdTe

Collet

Pugnet

Rühle

et al. 1990

Journal of Applied Physics

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The nonlinear propagation of picosecond pulses in CdTe is investigated. First, the band-gap dynamics is studied in the presence of a dense electron-hole plasma using time-resolved luminescence in the picosecond regime. Good agreement is found between experimental results for band -gap shrinkage and theory for densities of 5 X 10 1 (, -4 X 10 17 cm .. 3 • Second, the nonlinear transmission of optical pulses through CdTe/CdZn o . 04 Te o . 9U heterostructures is investigated for photon energies close to the unexcited band gap. We demonstrate that, depending on the energy of the incident pulse, induced transmission or induced absorption takes place: Self-induced transmission is caused by band filling at high intensity E of the incident pulses (E"", 100-200 pJ/cm2 ). Self-induced absorption is observed at relatively low incident intensity (E"", 15-20 ,ul/cmz). This effect is related to the band-gap shrinkage of the CdTe epilayer in the presence of a nondegenerate electron-hole plasma. A transmission theory of picosecond pulses propagating i.n and exciting the sample simultaneously is developed and provides a qualitative description of the experimental data. i815 J.

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Low-temperature absorption spectrum in GaAs in the presence of optical pumping

Cited by 117 publications

References 7 publications

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Symmetry Breaking-induced Band-splitting in GaAs Thin Film by First-principles Calculations

Band-gap dynamics and nonlinear propagation of optical pulses in CdTe

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