Low surface temperature synthesis and characterization of diamond thin films

Das, Debajyoti; Jayaseelan, Vidhya Sagar; Ramamurti, R.; Kukreja, Ratandeep S.; Guo, Li; Singh, Rajeev

doi:10.1016/j.diamond.2005.10.016

Cited by 24 publications

(17 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…978-1-4244-1728-5/07/$25.00 ©2007 IEEE Polycrystalline diamond films were successfully grown at lower surface deposition temperatures of 370 -530 0 C by controlling the surface temperature of the substrates in a MPCVD process (Table 1) [3,4]. High growth rate up to 1.3 m/h was obtained for films deposited on SiC substrate at the surface temperature of 530 0 C. The low-temperature-deposited films showed a pronounced (110) texture both on Si and SiC substrates with large grain sizes of ~ 3-7 m and presence of well crystallized diamond phase with 91-96% of sp 3 -C content along with small non-sp 3 impurity phases.…”

Section: Resultsmentioning

confidence: 99%

Processing and properties of diamond films for applications in novel electronic devices

Singh

Das

Govindaraju

2007

2007 International Workshop on Physics of Semiconductor Devices

Self Cite

View full text Add to dashboard Cite

Polycrystalline diamond films have unique properties for applications in advanced electronic devices. Undoped and doped polycrystalline diamond films are deposited on p type Si (100) and n type SiC (6H) substrates at the low surface deposition temperatures of 370 0 -530 0 C using a microwave plasma enhanced chemical vapor deposition (MPECVD) system in which the surface temperatures during deposition is monitored and controlled. The structure and microstructure of these films are characterized by X-ray diffraction, scanning electron microscopy, and Raman spectroscopy, and related to measured thermal and electrical properties. The room temperature in-plane thermal conductivity of the low surface temperature deposited thin films and electrical properties of the undoped and B-and N-doped films are measured over a temperature range of 25-550°C.Introduction Polycrystalline diamond (PCD) films have unique properties for applications in Si-, SiC-, and GaN-based electronics because of its wide bandgap, high thermal conductivity, and large carrier mobility [1,2]. In particular, diamond has the highest thermal conductivity of any materials and has wide bandgap, which make it quite attractive for applications in electronics for heat conduction or removal from active areas so that the circuits can be operated at higher power and higher efficiencies, and for potential applications in fabricating ICs that can be used at very high temperatures. However, one of the limitations has been on how to fabricate diamond thin films at low temperatures of < 400-500°C and characterize properties of the films for some of these applications. The primary objective of this research has been to develop lowtemperature processing techniques for the synthesis of undoped and doped high quality and nanostructured PCD films with good flatness and surface roughness suitable for applications in electronic devices. ExperimentalThe PCD growth was done by a modification of the microwave plasma enhanced chemical vapor deposition (MPECVD) method on Si (100) and SiC substrates using methane in a hydrogen or argon plasma environment. Our approach allowed better control of the deposition parameters and nanostructure during PCD growth. The influence of various process parameters such as plasma gas composition, substrate temperature, pressure, and microwave power on the composition, crystal quality, and properties of the PCD films were studied. Raman Spectroscopy, SEM, and X-Ray Diffraction techniques characterized the films. Thermal conductivity of the films was measured for possible applications as heat spreader in electronics. In addition, electrical properties of the undoped and doped films were measured between 25-550°C using a MSM structure for potential applications in hightemperature electronics. These results on processing, electrical properties, and thermal conductivity will be presented. Results and Discussion978-1-4244-1728-5/07/$25.00 ©2007 IEEE

show abstract

Section: Resultsmentioning

confidence: 99%

Processing and properties of diamond films for applications in novel electronic devices

Singh

Das

Govindaraju

2007

2007 International Workshop on Physics of Semiconductor Devices

Self Cite

View full text Add to dashboard Cite

show abstract

“…This phenomenon indicates that grain boundaries glide to form larger grains under high temperature annealing. The boundaries sliding occur in the <110> direction and leads to (111) pyramid surface formed [7]. It is suggested that oxygen ions prefer to locate on the grain boundaries along <110> direction to hinder the boundary sliding, while the growth in (200) plane originates from the sliding of boundaries with corresponding direction is strengthened.…”

Section: Methodsmentioning

confidence: 98%

“…In Fig. 2(b), the spectrum of 1000°C annealed B/O coimplanted diamond film exhibits a slope which increases towards higher wave numbers due to the luminescence background, characteristic of polymer-like films [7]. …”

Section: Methodsmentioning

confidence: 98%

The structural properties of O and B-O ion implanted diamond films

Ye²,

et al. 2008

SPIE Proceedings

View full text Add to dashboard Cite

The structural properties of B-O and O-implanted diamond films are investigated by using X-ray diffraction (XRD) and Raman spectrum. The results show that a sharp (111) peak of diamond can be found in XRD pattern after annealing under higher temperature, indicating the damaged diamond lattice produced by ion implantation has been restored. The calculated grain size of B-O co-implanted diamond films is smaller than that of O-implanted diamond under 1000 ºC annealing, implying the introduction of boron into O-implanted diamond can hinder the grain growth under high temperature annealing. Raman measurements show that higher temperature annealing can recover the damaged lattice.

show abstract

“…5 Following the growth, the samples were RCA cleaned and Al was deposited by thermal evaporation (base pressure 5 × 10 −6 Torr, ∼0.4 m thick) to serve as an etch mask for subsequent etching of the Si by means of an SF 6 plasma etcher (300 W, 300 milliTorr base pressure, 12 sccm SF 6 ) to result in free-standing diamond films [ Fig. dimensions.…”

Section: Methodsmentioning

confidence: 99%

“…4(e)], the dominant feature is the 1332 cm −1 peak due to sp 3 diamond, which is found to be shifted to 1334 cm −1 , the shift being attributed to the inherent stress in the film. 5 The results of such an analysis are presented in Table II. However, as the nitrogen content in the films increases [samples MCDN1, MCDN2, and MCDN3: Figs.…”

Section: A Sample Characteristicsmentioning

confidence: 99%

High-temperature electrical behavior of nanocrystalline and microcrystalline diamond films

et al. 2008

Self Cite

View full text Add to dashboard Cite

Chemical vapor deposition of diamond has opened up new applications in microelectronics, microelectromechanical systems (MEMS), and coating technologies. This paper compares and contrasts the high-temperature electrical behavior of microcrystalline versus nanocrystalline diamond films. Through-thickness current-voltage characteristics between room temperature and 823 K are presented for a series of films synthesized with different gas phase concentrations of nitrogen and argon. One set of samples was characterized by measurements between room temperature and 823 K and a second set by two-step thermal cycling from room temperature to 573 and 823 K. It was found that with increasing nitrogen concentration (up to 0.1% N 2 ), the resistivity slightly increased followed by a decrease at higher concentrations. Activation energies and barrier heights were in general lower for the more defective films. These results in conjunction with material characterization indicated that more defective diamond films were synthesized at higher nitrogen concentrations in the gas phase.

show abstract

Low surface temperature synthesis and characterization of diamond thin films

Cited by 24 publications

References 38 publications

Processing and properties of diamond films for applications in novel electronic devices

Processing and properties of diamond films for applications in novel electronic devices

The structural properties of O and B-O ion implanted diamond films

High-temperature electrical behavior of nanocrystalline and microcrystalline diamond films

Contact Info

Product

Resources

About