2015
DOI: 10.1063/1.4918749
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Low stiffness tactile transducers based on AlN thin film and polyimide

Abstract: In this paper, we propose a flexible piezoelectric MEMS transducer based on aluminum nitride thin film grown on polyimide soft substrate and developed for tactile sensing purposes. The proposed device consists of circular micro-cells, with a radius of 350 lm, made of polycrystalline c-axis textured AlN. The release of compressive stress by crystalline layers over polymer substrate allows an enhanced transduction response when the cell is patterned in circular dome-shaped geometries. The fabricated cells show a… Show more

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Cited by 19 publications
(29 citation statements)
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“…125,126 We do note that the above mentioned film thicknesses are significantly higher than those typically utilized in traditional Si CMOS high-k dielectric applications where thicknesses of <10 nm are more common. [2][3][4][5][6][7][8] However, many of the applications involving these materials as diffusion barriers, 27,31,127 nano-resonators, 80,81 and piezoelectric transducers 43,87 can require significantly higher thicknesses of 20-1000 nm. Also, use of film thicknesses >100 nm minimize substrate 128 and interfacial thermal boundary resistance 129 effects that can complicate the mechanical and thermal property measurements, respectively.…”
Section: Methodsmentioning
confidence: 99%
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“…125,126 We do note that the above mentioned film thicknesses are significantly higher than those typically utilized in traditional Si CMOS high-k dielectric applications where thicknesses of <10 nm are more common. [2][3][4][5][6][7][8] However, many of the applications involving these materials as diffusion barriers, 27,31,127 nano-resonators, 80,81 and piezoelectric transducers 43,87 can require significantly higher thicknesses of 20-1000 nm. Also, use of film thicknesses >100 nm minimize substrate 128 and interfacial thermal boundary resistance 129 effects that can complicate the mechanical and thermal property measurements, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…85,86 The piezoelectric properties of AlN 87 have additionally made it of interest as a transducer material in surface acoustic wave and NEM devices. 43,88 The high resistance of AlN to fluorinated plasmas 89 has further lead to its use as a plasma etch stop, 33 hard mask, 90,91 and Cu capping layer 33 in microelectronic device applications.…”
Section: Ecs Journal Of Solid State Science and Technology 6 (10) N1mentioning
confidence: 99%
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“…For dome fabrication, a 25 sans-serifμnormalm-thick polyimide layer is laminated on a silicon substrate, and subsequently, a sputtering growth process follows with the deposition of 120 normalnnormalm-thick Mo followed by an 800–1000 normalnnormalm-thick AlN layer. In an analogous manner, AlN/Mo-based multilayers grown on a flexible polyimide substrate release tensile stress by an upward deflection reaching approximately 40 sans-serifμnormalm for a diameter of 350 sans-serifμnormalm [27]. Consequently, structural elements based on AlN/Mo or Mo/AlN/Mo multilayers can be used for bent structures, such as beams and membranes [26,27,28].…”
Section: Methodsmentioning
confidence: 99%
“…In an analogous manner, AlN/Mo-based multilayers grown on a flexible polyimide substrate release tensile stress by an upward deflection reaching approximately 40 sans-serifμnormalm for a diameter of 350 sans-serifμnormalm [27]. Consequently, structural elements based on AlN/Mo or Mo/AlN/Mo multilayers can be used for bent structures, such as beams and membranes [26,27,28]. …”
Section: Methodsmentioning
confidence: 99%