Low size dispersion of inas quantum islands emitting at 1.55μm on InP [001]

Abstract

We show that the size dispersion of InAs/InP(OOl) quantum islands emitting at 1 S5pm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc -520°C and low PAs = 2 loe6 torr leading to a 2D/3D growth mode transition measured by W E E D at 1.8 ML, photoluminescence spectra with a FWHMs as low as 68meV at 300K have been obtained for a 4ML I d s deposit. Photoluminescence measurements as a function of the excitation power show that the multi-component PL spectra can be understood in terms of fundamental and excited levels of InAs islands. The fundamental peak (FWHM equal to 22meV at 8K) reveals a very low island size dispersion. Plane-view TEM and AFM images show that InAs islands are quantum << sticks )) aligned along [l-lo], with flat top surfaces. Cross-section TEM imaging shows a very weak height dispersion attributed to the ability of the InAs/InP(OOl) system to allow island height variation by monolayer fluctuation.