Low Side Gan Fet Driver for Space Applications

Mansilla, O.; Broline, J.; Satterfied, H.; Pearce, L. G.; Thomson, E. J.

doi:10.1051/e3sconf/20171612006

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Simulation and Results Of Gan Topology With Aerospace Applic...1

Introduction: Gan Power Devices and Drivers1

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“…To reduce the weight of L2, Tr1 and radiators of X5,6,7,8, simulations were made at F sw2 =50-400 KHz, see Table 10. In second full bridge circuit for one transistor X9 (or X10,11,12) the dependencies (5,6,7,8,9) are in effect, where: 𝑃 𝑜𝑛 is power loss during ON-state; 𝑅 𝑜𝑛 is drain-source on-state resistance; 𝑃 𝑠𝑤 is source-drain switching loss; 𝑃𝑔 is gate switching loss; 𝐸𝑜𝑛 _𝑜𝑓𝑓 is the drain switching loss energy (from manufacturer's data); 𝑉𝑔 is gate voltage; 𝑄𝑔 is total gate charge; Iss is steady state gate current.…”

Section: Simulation and Results Of Gan Topology With Aerospace Applic...mentioning

confidence: 99%

“…Suitable Radiation Hardened Low Side GaN FET Drivers are ISL70040SEH and ISL73040SEH. Other major providers of GaN parts are: Transphorm; VisIC Tech; Exagan; Sanken Electric; Dialogue Semiconductor; MicroGaN; Toshiba; Oorvo; Macom; Microsemi; NXP Semiconductor; Sumitomo Electric and United Monolithic [2,4,5,6,7,8]. Figure 1 shows comparison and advantages of different structures of GaN transistors, according to the specification of different manufacturers [9].…”

Section: Introduction: Gan Power Devices and Driversmentioning

confidence: 99%

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