Low resistivity and high mobility tin-doped indium oxide films

Synthesis and High-Pressure Study of Corundum-Type In2O3

“…14,15 Due to the scarcity and high cost to obtain indium metal, new 3 systems, like Sn-doped In 2 O 3 (ITO) and corundum-type In 2-2x Zn x Sn x O 3 (x ≤ 0.4, or ZITO), have been developed to cut the prize of the production system. [16][17][18] At ambient conditions In 2 O 3 usually crystallizes in the cubic bixbyite-type phase (space group (SG) Ia-3, N. 206, Z=16), 19 and other phases of In 2 O 3 can be obtained by the application of pressure and temperature: rhombohedral corundum-type (SG R-3c, N. 167, Z=6), orthorhombic Rh 2 O 3 -II type (SG Pbcn, N. 60, Z= 4), and orthorhombic α-Gd 2 S 3 -type (SG Pnma, N. 62, Z= 4). Moreover, a new orthorhombic Rh 2 O 3 -III (SG Pbca, N. 61, Z= 8) phase has been recently discovered, which is considered to be the high-pressure structure of corundum-type In 2 O 3 at ambient temperature.…”

Transparent Conductive Oxide (TCO) Films for Organic Light Emissive Devices (OLEDs)

“…Rauf used a zone confining process to deposit ITO with r = 4.4x10 -5 W·cm and m = 10 3 cm 2 /Vs. (Rauf, 1993) The highly and lowly doped regions were laterally arranged in the films, rather than vertically as in superlattice structures. A theoretical outline of a method to engineer high mobility TCOs was presented by Robbins and Wolden, based on the high mobility transistor structure discovered accidentally by Tuttle et al(Robin & Wolden, 2003) The film should consist of alternating thin layers of two semiconductors.…”

Effect of discharge power density on the properties of Al and F co-doped ZnO thin films prepared at room temperature

“…Further increase of the mobility to 200 cm 2 V −1 s −1 can be achieved through improving the crystallinity of the tin films by preparing single crystal or hetero-epitaxial ZnO films [13]. Another way to improve the mobility is to modulate doping through multilayers of heavily and poorly doped semiconducting films [14,15]. However, data on heavily doped single crystal or epitaxial layers are rare, and the doping relies on advanced deposition techniques and facilities.…”