2011
DOI: 10.1007/s00542-011-1248-4
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Low resistive silicon substrate as an etch-stop layer for drilling thick SiO2 by spark assisted chemical engraving (SACE)

Abstract: Controlling precisely the depth in glass microdrilling by spark assisted chemical engraving (SACE) remains challenging, particularly for low depths. The possibility of using an electrically conductive material as an etch-stop layer for SACE gravity-feed drilling is investigated in this paper. Micromachining with constant DC and pulsed DC of 30-35 lm thick SiO 2 deposited on low resistive silicon substrate demonstrated the etch-stop function of the conductive silicon. Measurements of etch rates and hole profile… Show more

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Cited by 4 publications
(1 citation statement)
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“…Technologies such as deep reactive ion etching (DRIE) 19,20 and laser machining 21 are reported for the highaspect ratio micromachining of silica layer, but they are expensive, complex, and time consuming. Recently, a lowcost, nontraditional micromachining technology called spark assisted chemical engraving (SACE) 22 has been employed for the machining of silica layer deposited on silicon substrate. Development of microfluidic channel and optical waveguide on SOS using SACE is still underway, due to high roughness surface associated with the SACE.…”
Section: Introductionmentioning
confidence: 99%
“…Technologies such as deep reactive ion etching (DRIE) 19,20 and laser machining 21 are reported for the highaspect ratio micromachining of silica layer, but they are expensive, complex, and time consuming. Recently, a lowcost, nontraditional micromachining technology called spark assisted chemical engraving (SACE) 22 has been employed for the machining of silica layer deposited on silicon substrate. Development of microfluidic channel and optical waveguide on SOS using SACE is still underway, due to high roughness surface associated with the SACE.…”
Section: Introductionmentioning
confidence: 99%