Low resistive aluminum doped nanocrystalline zinc oxide for reducing gas sensor application via sol–gel process

Hou, Yue; Soleimanpour, Amir M.; Jayatissa, Ahalapitiya H.

doi:10.1016/j.snb.2012.11.085

Cited by 43 publications

(20 citation statements)

References 31 publications

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“…Since its boiling temperature is only 64.7°C, it has already volatilized during the spin-coating process. It was likely to cause the mechanical stress and form the porous wrinkled microstructure, as suggested by Hou et al [22]. The boiling temperatures of ethanol and 2-(methylamino)ethanol are 78°C and 159°C, respectively.…”

Section: Discussionmentioning

confidence: 85%

“…Maiti et al [21] indicated that the formation of wrinkled surface was due to the presence of monoethanolamine in the precursor. Hou et al [22] suggested that the formation of wrinkled structure was related to the release of mechanical stress, which was generated during the baking process. By adjusting the preheating conditions in the spin-coating process, the formation of wrinkled structure could be avoided.…”

Section: Introductionmentioning

confidence: 99%

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(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

Guo

et al. 2016

Materials Science-Poland

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Zinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0) substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2) preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylamino)ethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2)-oriented ZnO thin films were formed by adjusting the baking temperature.

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Section: Discussionmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

Guo

et al. 2016

Materials Science-Poland

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“…However, the role played by Al atoms in the improvement of the sensing performance of Al-doped ZnO gas sensors remains unclear because the doped Al acts as a donor in ZnO, changing not only the electronic properties but also the microstructure of the ZnO, such as grain size, shape, and degree of orientation. 23) Hou et al 18) and Badadhe et al 19) suggested that a decrease in grain size accompanied by the Al doping led to the improvement of the sensing response. Meanwhile, Navale et al 21) concluded that surface defects formed by Al doping play an important role in the enhancement of the gas sensing response, according to electron paramagnetic resonance measurements and diffuse reflectance spectroscopy.…”

Section: )2)mentioning

confidence: 99%

Gas sensing properties of <i>c</i>-axis-oriented Al-incorporated ZnO films epitaxially grown on (11-20) sapphire substrates using pulsed laser deposition

Adachi

Watanabe

Saito

et al. 2016

J. Ceram. Soc. Japan

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Al-incorporated ZnO films with various Al concentrations were prepared using pulsed laser deposition on the (11 20) face of sapphire substrates, and their gas sensing properties were evaluated. The use of c-axis-oriented epitaxial films with the same thickness suppressed the influence of the surface-to-volume ratio and surface atomic arrangements on the sensing properties, clarifying the role of Al doping in the improvement of ZnO gas sensors. The results of ethanol gas sensing measurements indicated that Al doping significantly improved the sensing response and response time of the ZnO gas sensors. The formation of Al-related impurity phases and/or non-equilibrium defects induced by Al doping improved the sensing performance. On the other hand, changes in the grain size did not significantly affect the sensing response.

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“…In the case of hydrogen, electrons are injected in the metal oxide according to reaction (2) causing an increase in the concentration of free carriers which genereates a consequent blue shift of the LSPR peak and an increase of the optical band gap. The interaction with oxidizing gases like NO2 conversely causes the removal of electrons acording to reaction (3), with the related red-shift of the plasmon peak and the reduction of the optical band gap.…”

Section: Resultsmentioning

confidence: 99%

“…These dopants are also responsible for the generation of a strong localized surface plasmon resonance (LSPR) in the near infrared, arising from the increased free electron concentration. While the main applications of TCOs are in optoelectronic devices, they have been recently used also for gas sensing applications, in particular ZnO doped with gallium (GZO) and aluminum (AZO) have been used for electrical sensing of hydrogen, methanol, nitrogen dioxide, hydrogen sulfide and optical sensing of hydrogen [2]. However, the optical features provided by the LSPR have never been used as sensing platforms.…”

Section: Introductionmentioning

confidence: 99%

Near Infrared Plasmonic Gas Sensing with Doped Metal Oxide Nanocrystals

Sturaro

Gaspera

Cantalini

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:In this paper, we demonstrate the application of ZnO doped with gallium (GZO), aluminum (AZO) and germanium (GeZO) nanocrystals as novel plasmonic and chemiresistive sensors for the detection of hazardous gases including hydrogen (H2) and nitrogen dioxide (NO2). GZO, AZO and GeZO nanocrystals are obtained by non-aqueous colloidal heat-up synthesis with high transparency in the visible range and strong localized surface plasmon resonance (LSPR) in the near IR range, tunable with dopant concentration (up to 20% mol nominal). Thanks to the strong sensitivity of the LSPR to chemical and electrical changes occurring at the surface of the nanocrystals, such optical features can be used to detect the presence of toxic gases. By monitoring the changes in the dopant-induced plasmon resonance in the near infrared, we demonstrate that GZO, AZO and GeZO thin films prepared depositing an assembly of highly doped ZnO colloids are able to optically detect both oxidizing and reducing gases at mild (<100 °C) operating temperatures. Combined optical and electrical measurements show that the dopants within ZnO nanocrystals enhance the gas sensing response compared to undoped ZnO.

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Low resistive aluminum doped nanocrystalline zinc oxide for reducing gas sensor application via sol–gel process

Cited by 43 publications

References 31 publications

(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

Gas sensing properties of <i>c</i>-axis-oriented Al-incorporated ZnO films epitaxially grown on (11-20) sapphire substrates using pulsed laser deposition

Near Infrared Plasmonic Gas Sensing with Doped Metal Oxide Nanocrystals

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