2007 International Conference on Numerical Simulation of Optoelectronic Devices 2007
DOI: 10.1109/nusod.2007.4348994
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Low-refractive-index materials: A new class of optical thin-film materials

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Cited by 7 publications
(6 citation statements)
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“…For example, low refractive index materials are ideal for the fabrication of optical components such as reflectors, filters, band-passes and photonic crystals. This is in addition to the fabrication of devices such as lasers, LEDs, and solar cells [ 8 ]. On the other hand, high refractive index polymeric materials are reported to be required for anti-refractive coatings, micro-lenses for CMOS image sensors, encapsulants for LEDs, and high-n thermoplastic lens applications [ 9 ].…”
Section: Introductionmentioning
confidence: 99%
“…For example, low refractive index materials are ideal for the fabrication of optical components such as reflectors, filters, band-passes and photonic crystals. This is in addition to the fabrication of devices such as lasers, LEDs, and solar cells [ 8 ]. On the other hand, high refractive index polymeric materials are reported to be required for anti-refractive coatings, micro-lenses for CMOS image sensors, encapsulants for LEDs, and high-n thermoplastic lens applications [ 9 ].…”
Section: Introductionmentioning
confidence: 99%
“…7, the core (lossy) relative permittivity is in line with that exhibited by semiconductors such as silicon, InP, GaP at infrared wavelengths [61], with suitable absorptive dopants. On the other hand, the shell (gain) relative permittivity is obtained from (18), with parameters that are consistent with models of organic dyes [59], [62] embedded in a low-index dielectric [63], [64] available in the literature. For instance, at nearinfrared wavelengths, a realistic parameter configuration could entail ε h = 1.125 and the organic dye LDS798 (by Exciton) featuring ω a = ω c = 2πc/λ a (with λ a = 777 nm), ∆ω a = 2πc∆λ a /λ 2 a (with ∆λ a = 56 nm), σ a = 6πc 3 η/ τ 21 ω 2 a √ ε h (with η = 0.48),N 0 = 6.1·10 18 cm −3 , τ 21 = 50 ps, τ 10 = 100 fs, τ 32 = 100 fs [62], and pumping rate Γ p = 1.536 × 10 9 s −1 compatible with the value considered in [59].…”
Section: Technological Feasibilitymentioning
confidence: 71%
“…The absorption coefficient or extinction coefficient of silicon is larger than these of alumina and silicon dioxide, which are approximately zero, within the wavelength of visible light. 29 Therefore, the discoloration of the anodized alloys is the accumulative effect of the two factors. It is difficult to quantitatively determine the contribution of each factor to the discolored appearance since these two factors either go together or interconnect with each other (e.g.…”
Section: Discussionmentioning
confidence: 99%