Low-pressure sensors employing bossed diaphragms and precision etch-stopping

Mallon, Joseph R.; Pourahmadi, F.; Petersen, K.; Barth, P.W.; Vermeulen, T.; Bryzek, Janusz

doi:10.1016/0924-4247(90)85018-y

Cited by 38 publications

(14 citation statements)

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“…Several solutions have been proposed to reduce this nonlinearity: (a) allowing the central part of the diaphragm to touch the bottom of the cavity during the pressure range of interest [12]; (b) corrugation or weakening of parts of the diaphragm [13,14]; (c) a structure using comb-shaped diaphragm and cavity bottom [15]. A combination of these methods is also used.…”

Section: Proposition Of a New Capacitive Structurementioning

confidence: 99%

A novel capacitive pressure sensor structure with high sensitivity and quasi-linear response

Ettouhami

Zerhouni

Elbelkacemi

2004

Comptes Rendus. Mécanique

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Section: Proposition Of a New Capacitive Structurementioning

confidence: 99%

A novel capacitive pressure sensor structure with high sensitivity and quasi-linear response

Ettouhami

Zerhouni

Elbelkacemi

2004

Comptes Rendus. Mécanique

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“…Furthermore, the nonlinearity rapidly increases with the extended a/h values. On the other hand, the general characteristic equation of a rigid-center diaphragm loaded by a pressure can be expressed as (9) where (10) By combining Eq. (9) with Eq.…”

Section: )mentioning

confidence: 99%

“…Although the analysis has become more complicated for a structure bossed at the center of a thin diaphragm, rapidly progressing computer performance has provided each sensor designer with a powerful FEM-based CAD tool, which is indispensable in designing various sensor structures today (8), (9).…”

Section: Introduction Introductionmentioning

confidence: 99%

“…This is because mechanical elastic constants are well known for bulk silicon and because the linear plate theory has been very applicable in this case, since the diaphragm thickness. Recently, a stiffened membrane structure has often been used to improve the nonlinear response of a diaphragm to an applied pressure(2),(5), (9), (10).…”

Section: Introduction Introductionmentioning

confidence: 99%

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Mechanical characteristics of deeply boron-doped silicon membranes for capacitive pressure sensors.

Suzuki¹

1996

IEEJ Trans. SM

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SummaryThe mechanical behavior of deeply boron-doped silicon membranes is analyzed by using a simple analytical model. The boron-doped silicon membranes have intrinsic properties different from those of widely-used bulk silicon membranes: strong influence of a residual well as greatly decrease their sensitivity. This paper confirms the strong influence of these intrinsic properties on pressure-to-deflection response for boron-doped silicon flat and semi-bossed structures. By comparing the calculated values with measured values, an intuitive image for actual thin membranes is successfully obtained. Moreover, the temperature dependence of the capacitive sensors is discussed to propose a new model that considers the change in the residual stress and the elastic constant with temperature.The obtained results will be helpful in optimizing design parameters for capacitive pressure sensors.

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“…Enhancing the sensitivity has also been a main issue in the research of micro pressure sensors. Design modifications like employing a bossed diaphragm and multiple diaphragms [7,8] and material modification by using phosphorous diffused polysilicon piezoresistors [9] polymer diaphragms and alternate piezoresistive materials [10][11][12][13] have also been studied. This paper deals with a design methodology aimed at improving the sensitivity of the sensor based on fracture stress and linearity conditions.…”

mentioning

confidence: 99%

Design of a Piezoresistive Micropressure Sensor using Finite Element Analysis

Madhavi¹,

Krishna²,

Murthy³

2013

IJCA

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This paper is about designing a silicon based piezoresistive micro pressure sensor for greater sensitivity. Using Finite Element Analysis (FEA) the role played by important design parameters like the side length and the thickness of the pressure sensing membrane in determining the sensitivity of the sensor are studied in detail for a pressure of 100 kPa. The fracture stress of silicon is adopted as the main criterion for selecting the dimensions of the diaphragm in order to obtain maximum sensitivity and to ensure safe sensor operation. From the FEA results the side length and the thickness of the sensor are determined as 1000 µm and 17.2 µm respectively. The stress profile of the diaphragm is studied in order to determine the optimum length and positioning of piezoresistors. The piezoresistors are placed in six different patterns and the sensitivity of the sensor for each pattern is determined. The maximum sensitivity is found to be 41.6 mV/V/Bar. The effect of variation in the length of the piezoresistor on the sensitivity of the sensor has been studied and the optimum length of the piezoresistor is determined as 100 µm.

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Low-pressure sensors employing bossed diaphragms and precision etch-stopping

Cited by 38 publications

References 0 publications

A novel capacitive pressure sensor structure with high sensitivity and quasi-linear response

A novel capacitive pressure sensor structure with high sensitivity and quasi-linear response

Mechanical characteristics of deeply boron-doped silicon membranes for capacitive pressure sensors.

Design of a Piezoresistive Micropressure Sensor using Finite Element Analysis

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