Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate

Becker, Frank

doi:10.1116/1.583673

Cited by 113 publications

(75 citation statements)

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“…This is mainly due to the capability of the SiH/0 2 reaction for achieving reasonable deposition rates at relatively low temperatures (typically between 300 0 and 450 0 C), which obeys to the abundant formation of highly reactive free radicals in the gas-phase [1,2]. Apart from this beneficial effect, the highly reactive character of the SiH/0 2 system results in poor step coverage of micro-sized trenches (non-conformal deposition) [3]. Moderation of SiH/0 2 reaction by addition of certain radical scavengers (e.g., C 2 H 2 ) [4] or substitution of SiH 4 by metal organic precursors [5,6], mainly TEOS, are possible solutions to improve the step coverage conformality.…”

Section: Introductionmentioning

confidence: 99%

Study of the growth mechanisms of low-pressure chemically vapour deposited silica films

et al. 1999

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We have studied the surface morphology evolution of Si0 2 films grown at 20 nm/min in a low-pressure chemical vapour deposition reactor from SiHi02 mixtures at low (611 K) and high (723 K) temperatures. Films have been deposited for times ranging from 10 min up to 48 hours. It is shown that the SiO, growth at high temperature becomes stable, whereas at low temperature it is unstable (i.e., the surface roughness increases continuously with deposition time). This clear difference is explained on the basis of the different growth mechanisms operating under both experimental conditions. These results are compared with the predictions of the few theoretical works on growth evolution by chemical vapour deposition.

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Section: Introductionmentioning

confidence: 99%

Study of the growth mechanisms of low-pressure chemically vapour deposited silica films

et al. 1999

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“…One of the most frequently used precursors for this purpose is tetraethoxysilane (TEOS) [1][2][3]. Because of the complexity of the processes involved in oxide formation via TEOS CVD a microscopic understanding of these steps is essential for a quality improvement of the resulting insulating layers.…”

Section: Introductionmentioning

confidence: 99%

Thermal decomposition of tetraethoxysilane (TEOS) on Si(111)-(7×7)

Spitzmüller¹,

Braun²,

Rauscher³

et al. 1998

Applied Physics A: Materials Science & Processing

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We report results of a combined scanning tunneling microscopy and X-ray photoelectron spectroscopy study on the thermal decomposition of tetraethoxysilane (TEOS), a precursor for SiO 2 formation by chemical vapor deposition, on Si(111)-(7 × 7). Annealing after predominantly dissociative adsorption at room temperature, where triethoxysiloxane and ethyl groups are the main adsorbate species, leads to further decomposition with various products evolving, including diethoxysiloxane and further ethyl groups. This goes along with structural changes on the (7 × 7) reconstructed surface. A characteristic new structural element, with a maximum on interstitial sites, is interpreted as the very beginning of surface oxide formation.Over the last few years chemical vapor deposition (CVD) of SiO 2 has emerged as an attractive alternative for producing ultrathin dielectric layers on silicon at relatively low temperatures. One of the most frequently used precursors for this purpose is tetraethoxysilane (TEOS) [1-3]. Because of the complexity of the processes involved in oxide formation via TEOS CVD a microscopic understanding of these steps is essential for a quality improvement of the resulting insulating layers. First studies aiming at the microscopic understanding of TEOS decomposition and oxide growth involving high resolution electron energy loss spectroscopy (HREELS) [4,5], thermal desorption spectroscopy (TDS) [4,5], and X-ray photoelectron spectroscopy (XPS) [5,6], yielded information on the dissociation mechanisms and the oxide composition on Si(100)-(2 × 1). For a detailed understanding, however, locally resolved structural information on the distribution of the various decomposition products and their thermal evolution is essential, in particular for the first stages of TEOS decomposition, since the structure of the interface between the silicon substrate and the growing oxide is likely to critically influence the growth and hence the properties of the final oxide. First scanning tunneling microscopy (STM) and XPS results on the adsorption process of TEOS on Si(111)-(7 × 7) at room temperature have been published recently [7]. In that study it was found that TEOS dissociates mainly into triethoxysiloxane and ethyl groups in a highly site selective reaction, with the former species adsorbing on adatoms and the latter on rest atoms/corner hole atoms. In this work we focus on the thermal decomposition of these adsorbates upon annealing. We will concentrate on microscopic structural changes induced and on the Si(111)-(7 × 7) substrate surface. To this end we mainly evaluate STM topography images obtained after TEOS exposure and various annealing steps, supplemented by XPS results. We will restrict ourselves to the more clear case of rather low TEOS coverages, resulting from exposures of less than or equal 1 L. ExperimentalThe STM and XPS experiments were performed in two different ultra-high vacuum (UHV) systems, equipped with a pocket-size STM and a Fisons CLAM 2 XPS system, respectively, and standard equipment for surfa...

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“…After crystallising the amorphous silicon (a-Si) layer, TEOS and SiN x were deposited using PECVD for the gate insulator, then gate metal was formed. TEOS-based SiO 2 dielectrics prepared by the O 2 -PECVD method, owing to higher deposition rates and superior step coverage, have been widely used in the microelectronics industry as interlayer and intermetal dielectrics [2]. After a dielectric material for an interlayer was deposited, contact holes were patterned, followed by the deposition of S/D metal (MoW ¼ 2500 Å ) and subsequent patterning to form electrodes.…”

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confidence: 99%

ITO/AlNdN/Al contact process for active matrix OLED displays

Kim

Jin

2009

Electron. Lett.

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Integrating circuits into organic light emitting diode displays requires fabrication of polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on glass substrates. A novel ITO/AlNdN/Al contact process has been developed for the pixel step. In metallisation, ITO/ Al interconnection is metallurgically undesirable. An AlNdN layer is selected for a pixel material and ITO/AlNdN/Al structure is applied to the pixel line. Reported is the feasibility for the multilevel ITO/ AlNdN/Al contact, which can make the poly-Si TFTs competitive in the market.Introduction: Organic light emitting diode (OLED) displays are being actively developed as one of the best flat panel display technologies suitable for information-display applications in the next generation of displays. Developing top-emitting (TE) OLED structures coupled with a low-temperature polysilicon (LTPS) TFT backplane is one of the most important key-element techniques in active-matrix (AM) OLED displays. TEOLEDs can provide not only a higher aperture ratio than the general bottom emitting (BE) diodes, but can also display higher image quality on account of their geometrical merit allowing a high pixel resolution.In TEOLEDs, pixel metal layers play an important role in achieving good device performance. Many attempts have been made to develop a proper pixel metal. Aluminium (Al) is the most widely used metallisation material on presently available silicon integrated circuits, both bipolar and MOS. However, pure Al has a serious drawback related to formation of hillock and galvanic corrosion [1] between ITO and source/drain (S/D) metals. The structural, electrical and etching characteristics of the Al alloy (AlNdN) deposited by using DC magnetron sputtering deposition are investigated for the applications as a pixel line in the 2.4-inch diagonal full-colour AMOLED panel.

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Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate

Cited by 113 publications

References 0 publications

Study of the growth mechanisms of low-pressure chemically vapour deposited silica films

Study of the growth mechanisms of low-pressure chemically vapour deposited silica films

Thermal decomposition of tetraethoxysilane (TEOS) on Si(111)-(7×7)

ITO/AlNdN/Al contact process for active matrix OLED displays

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