Low‐Pressure Chemical Vapor Deposition of Hexagonal Boron Nitride on a‐Plane Sapphire Using BCl3 as a Boron Source
Kazuhiko Hara,
Taiki Oishi,
Soma Ota
et al.
Abstract:Hexagonal boron nitride (h‐BN) thin films are grown on a‐plane sapphire substrates at different temperatures, Tg, by low‐pressure chemical vapor deposition with BCl3 and NH3 as boron and nitrogen sources, respectively, and their crystallographic and luminescence properties are compared with those grown on c‐plane sapphire. A notable difference from the c‐plane sapphire is that the substrate surface is significantly nitrided during film growth at Tg higher than 1200 °C, whereas no such nitridation is observed u… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.