Low-pressure chemical vapor deposition of GaN epitaxial films

Hydride vapor phase epitaxy for gallium nitride substrate

“…THVPE is an interesting alternative to the conventional HVPE, it uses gallium tri-chloride (GaCl 3 ) as the Ⅲ-precursor, instead of using gallium mono-chloride (GaCl) as the Ⅲ-precursor in conventional HVPE, the precursor GaCl 3 can be supplied into the growth zone by two approaches, the first approach is directly evaporation or sublimation from the GaCl 3 [43][44][45][46] , the second is the reaction of metallic Ga metal with Cl 2 in the source zone [47][48][49][50] , the first approach is less general due to the high hygroscopic nature of GaCl 3 powder materials, which could bring the purity problem [49] , bellowing we would focus on the second approach. The dominant che- mical reaction on the THVPE reactor can be written as follows:…”

On the chloride vapor-phase epitaxy growth of GaN and its characterization

“…However, because of the metalorganic Ga precursor and the use of ammonia, the film shows significant incorporation of carbon and hydrogen [6]. Hydrogen is known to passivate the Mg-acceptor, while the role of C is still not very clear.…”

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

“…Thus, we can make our reactor structure with only one heating zone. 16,17 With this easier reactor structure, improved reproducibility in the quality of grown crystals was obtained by easily controlling the amount of the Ga source. Moreover, in the chloride source system, with additional InCl 3 supply equipment, InGaN epitaxial layers can be grown without deposition of In droplets.…”