Low-Power Memristor Based on Two-Dimensional Materials

Abstract

The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in memristors with high-performance resistive switching characteristics, such as high on/off ratios, low SET/RESET voltages, good retention and endurance, fast switching speed, and low power and energy consumption. Low-power memristors are highly desired for recent fast-speed and energy-efficient artificial neuromorphic networks. This Perspective focuses on the recent progress of low-power memristors based on 2D materials, providing a condensed overview of relevant developments in memristive performance, physical mechanism, material modification, and device assembly as well as potential applications. The detailed research status of memristors has been reviewed based on different 2D materials from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides, to some newly developed 2D materials. Furthermore, a brief summary introducing the perspectives and challenges is included, with the aim of providing an insightful guide for this research field.

Tunable Resistive Switching in 2D MXene Ti3C2 Nanosheets for Non-Volatile Memory and Neuromorphic Computing

“…In recent years, two-dimensional (2D) materials have been widely used as the RS layer in memristors due to their controllable ultra-thin thickness and unique electronic properties, such as transition metal dichalcogenides and boron nitride . In addition, memristors based on 2D materials can truly achieve nanoscale dimension and even a single atomic layer, contributing to low power consumption, gate tunability, and mechanical flexibility. , Furthermore, such memristors based on 2D materials are applicable to the artificial synapses for brain-inspired neuromorphic computing. , Ti 3 C 2 , as a well-studied 2D material in the MXene family, has been widely used in supercapacitors, batteries, catalysts, , and biosensors . In recent years, studies of Ti 3 C 2 in memristors and memristor-based artificial synapses have gradually emerged owing to its outstanding electric properties and diverse structures, , but the research is still limited compared to other classes of nanomaterials.…”

“…10 In addition, memristors based on 2D materials can truly achieve nanoscale dimension and even a single atomic layer, contributing to low power consumption, gate tunability, and mechanical flexibility. 11,12 Furthermore, such memristors based on 2D materials are applicable to the artificial synapses for brain-inspired neuromorphic computing. 13,14 Ti 3 C 2 , as a wellstudied 2D material in the MXene family, has been widely used in supercapacitors, 15 batteries, 16 catalysts, 17,18 and biosensors.…”

Robust 2D MoS2 Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic Computing

“…38 Among the available electrochemical reaction-based electrolyte transistors, lithium-based EGT synaptic devices are very attractive in terms of good linearity, parallel operation capability, and long-term retention. 39 In particular, the performance states can be precisely modulated by applying an electric field to the gate electrode. 36 However, most of the reported Li-ion-based EGT synaptic devices are employed using ion gels or liquid electrolytes because Li ions are abundant and easily fabricated in electrolytes.…”

“…In particular, the performance states can be precisely modulated by applying an electric field to the gate electrode . However, most of the reported Li-ion-based EGT synaptic devices are employed using ion gels or liquid electrolytes because Li ions are abundant and easily fabricated in electrolytes. , Thus, it is not easy to incorporate these materials in the CMOS fabrication process and to scale them down to the nanometer scale for low power consumption. − Recently, an oxide-based EGT synaptic 32 × 32 array device including an amorphous Nb 2 O 5 channel and an LSO electrolyte has been reported for spatiotemporal information processing applications . These demonstrations could be used to implement solid-state Li-ion electrolytes in three-terminal EGT synaptic devices.…”

“…In the case of the electrochemical reaction mechanism, the mobile ions undergo a reversible electrochemical reduction in the channel upon invading the active channel materials . Among the available electrochemical reaction-based electrolyte transistors, lithium-based EGT synaptic devices are very attractive in terms of good linearity, parallel operation capability, and long-term retention . In particular, the performance states can be precisely modulated by applying an electric field to the gate electrode .…”