Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application

Ashraf, Mohammed; Sundararajan, Sree V.; Grenci, Gianluca

doi:10.1117/1.jmm.16.3.034501

Cited by 14 publications

(13 citation statements)

References 17 publications

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“…The pattern was then produced with direct writing in a DWL-66fs Heidelberg laser writer equipped with a diode-laser-emitting light at 375 nm wavelength. After development for 1 min in AZ400 K diluted 1 : 4 in DI water, the patterned resist mask was then used to etch the silicon oxide layer in a Samco 10NR RIE tool using CF 4 /O 2 etching chemistry (40/4 sccm, respectively), 15 Pa, 150 W applied through an RF generator at 13.56 MHz, as described in Ashraf et al [91]. After stripping the resist, 10 min of anisotropic etching in 5 M KOH at 808C produced the triangular trenches with the designed sizes.…”

Section: (G) Microfabrication Of Triangular Ridgesmentioning

confidence: 99%

Forces and constraints controlling podosome assembly and disassembly

Rafiq

Grenci

Lim

et al. 2019

Phil. Trans. R. Soc. B

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Podosomes are a singular category of integrin-mediated adhesions important in the processes of cell migration, matrix degradation and cancer cell invasion. Despite a wealth of biochemical studies, the effects of mechanical forces on podosome integrity and dynamics are poorly understood. Here, we show that podosomes are highly sensitive to two groups of physical factors. First, we describe the process of podosome disassembly induced by activation of myosin-IIA filament assembly. Next, we find that podosome integrity and dynamics depends upon membrane tension and can be experimentally perturbed by osmotic swelling and deoxycholate treatment. We have also found that podosomes can be disrupted in a reversible manner by single or cyclic radial stretching of the substratum. We show that disruption of podosomes induced by osmotic swelling is independent of myosin-II filaments. The inhibition of the membrane sculpting protein, dynamin-II, but not clathrin, resulted in activation of myosin-IIA filament formation and disruption of podosomes. The effect of dynamin-II inhibition on podosomes was, however, independent of myosin-II filaments. Moreover, formation of organized arrays of podosomes in response to microtopographic cues (the ridges with triangular profile) was not accompanied by reorganization of myosin-II filaments. Thus, mechanical elements such as myosin-II filaments and factors affecting membrane tension/sculpting independently modulate podosome formation and dynamics, underlying a versatile response of these adhesion structures to intracellular and extracellular cues. This article is part of a discussion meeting issue ‘Forces in cancer: interdisciplinary approaches in tumour mechanobiology’.

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Section: (G) Microfabrication Of Triangular Ridgesmentioning

confidence: 99%

Forces and constraints controlling podosome assembly and disassembly

Rafiq

Grenci

Lim

et al. 2019

Phil. Trans. R. Soc. B

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“…As was shown in Refs. [ 28 , 29 ], the latter provides weaker surface damage due to lower ion flux as well as exhibits more anisotropic etching because of reduced neutral/charged ratio.…”

Section: Introductionmentioning

confidence: 99%

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

et al. 2021

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This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

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“…Starting with dipping the substrate in the Piranha solution [a mixture of H 2 SO 4 : H 2 O 2 (3:1)] for 10 min, so residual organics were removed from the sample surface, followed by rinsing in the deionized water, followed by a blowdry using compressed N 2 gun. Then to further smoothen out the substrate surface, CHF 3 + O 2 plasma cleaning (Turner and Chi, 2003;Ashraf et al, 2017) was performed in a Reactive Ion Etching (RIE) chamber for 2 min. Finally, the substrate was cleaned with acetone in the ultrasonic bath for 10 min to remove any particle/contamination from the previous plasma cleaning step.…”

Section: Tunneling Selector Designmentioning

confidence: 99%

Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration

Upadhyay

Blum

Maksymovych

et al. 2021

Front. Nanotechnol.

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Memristor devices have been extensively studied as one of the most promising technologies for next-generation non-volatile memory. However, for the memristor devices to have a real technological impact, they must be densely packed in a large crossbar array (CBA) exceeding Gigabytes in size. Devising a selector device that is CMOS compatible, 3D stackable, and has a high non-linearity (NL) and great endurance is a crucial enabling ingredient to reach this goal. Tunneling based selectors are very promising in these aspects, but the mediocre NL value limits their applications in large passive crossbar arrays. In this work, we demonstrated a trilayer tunneling selector based on the Ge/Pt/TaN1+x/Ta2O5/TaN1+x/Pd layers that could achieve a NL of 3 × 105, which is the highest NL achieved using a tunnel selector so far. The record-high tunneling NL is partially attributed to the bottom electrode's ultra-smoothness (BE) induced by a Ge/Pt layer. We further demonstrated the feasibility of 1S1R (1-selector 1-resistor) integration by vertically integrating a Pd/Ta2O5/Ru based memristor on top of the proposed selector.

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Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application

Cited by 14 publications

References 17 publications

Forces and constraints controlling podosome assembly and disassembly

Forces and constraints controlling podosome assembly and disassembly

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration

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