Low power, high speed carbon nanotube FET based level shifter

Shrivastava, Bhavana P.

doi:10.1109/icici.2017.8365353

Cited by 2 publications

(3 citation statements)

References 20 publications

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“…Bandgap for different chirality is illustrated in the table 1 [2]. For MT-CNTFET, its bandgap is given by:…”

Section: Bandgap Controlmentioning

confidence: 99%

“…One of the most crucial traits of CNTFET is that it has a variable bandgap which leads to an alterable threshold voltage 𝑉 𝑇𝐻 . Thus, CNTFET could be put into application of different transistors for power reduction [2].…”

Section: Bandgap Controlmentioning

confidence: 99%

“…In this case, CNTFET shows its superiority to use in multiple threshold transistors. The chirality vector (m,n) gives CNTFET a two dimensional degree of freedom to adjust its bandgap as well as the threshold voltage to fit different requirements for practical application [2].…”

Section: Bandgap Controlmentioning

confidence: 99%

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Carbon nanotube FET for spiking neural networks

Hsiung,

Peng

2024

Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023)

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The increasing demand for Spiking Neural Networks (SNNs), characterized by high power consumption and the need for high speed, has rendered conventional silicon-based Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) incompetent for spiking applications. Carbon Nanotube Field-Effect Transistors (CNTFETs) have emerged as a promising alternative to replace MOSFETs and achieve significant energy efficiency benefits without compromising the speed performance compared to silicon-based FETs. This research paper begins by addressing the limitations of MOSFETs in the context of SNNs, highlighting their inefficiency in addressing the specific demands of neuromorphic hardware. The investigates then proceeds to examinate the advantageous attributes of CNTFETs over MOSFETs. The examination delves into the device electrical properties, mechanism, power and speed performance, power-delay product (PDP), and bandwidth capabilities. Recent findings in power and delay characteristics of CNTFET circuit designs are also reviewed and compared to those of MOSFET-based in this article. The study demonstrates the practicality, potentials, and scaling challenges of CNTFETs as a viable solution for fulfilling the stringent requirements of spiking applications, showcasing their ability in providing the optimal speed and power performances. The insights gathered from this research hold great significance implications for the future development of SNN-specific hardware beyond complementary metal-oxide semiconductor (CMOS) electronics.

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“…Bandgap for different chirality is illustrated in the table 1 [2]. For MT-CNTFET, its bandgap is given by:…”

Section: Bandgap Controlmentioning

confidence: 99%

Section: Bandgap Controlmentioning

confidence: 99%

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Carbon nanotube FET for spiking neural networks

Hsiung,

Peng

2024

Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023)

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Design of Voltage Level Shifter Using CNTFET and Analysis of Process Voltage Temperature Variation

Prasad

Das

2022

J CIRCUIT SYST COMP

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In this work, we have presented the design of voltage level shifter using carbon nanotube field effect transistors (CNTFETs). The proposed design is capable of converting two input voltage levels to two output voltage levels. The threshold voltage of CNTFETs is suitably chosen to achieve the desired output. The proposed design can perform both up and down shifting which is very useful in the system-on-a-chip design to interface with other peripherals. It exhibits lower delay and power delay product in comparison with the existing complementary metal–oxide–semiconductor-based voltage level shifters. The proposed circuit is very effective as it eliminates the requirement of additional voltage level shifter for designing systems with multi-power supply voltage domain in the nanoscale regime. The design has been analyzed for different process, voltage and temperature corners. It has been shown that the design works perfectly with [Formula: see text] variation in the diameter of the carbon nanotubes used in the CNTFET. The performance varies slightly with [Formula: see text] variation in operating voltage. Our analysis shows that the design is thermally stable for a wide variation in operating temperature.

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Low power, high speed carbon nanotube FET based level shifter

Cited by 2 publications

References 20 publications

Carbon nanotube FET for spiking neural networks

Carbon nanotube FET for spiking neural networks

Design of Voltage Level Shifter Using CNTFET and Analysis of Process Voltage Temperature Variation

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