Low power HFET down converter MMIC's for wireless communication applications

Nair, V.; Tehrani, S.; Vaitkus, Rimantas; Scheitlin, D.

doi:10.1109/22.475672

Cited by 7 publications

(2 citation statements)

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“…Commercial GaAs MESFET foundry technology was used to design and fabricate an amplifier with 15dB of gain for 2-stages with 0.8 mW power at 1.25 GHz [l]. An HFET (heterostructure field effect transistor) amplifier RFIC (radio frequency integrated circuit) achieved 10 dB of gain at 0.5 niW and 900 MHz [2]. Amplifiers that operate at the 1 m W power level or lower have not been reported previously at higher frequencies.…”

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Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4 GHz

et al. 1999

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Absnact: Self-aligned GaAs JFET narrowband amplifiers operating at 2.4GHz were designed and fabricated with both discrete JFETs as a hybrid amplifier and as RFICs. Enhancement-mode JFETs were used in order to be compatible w i t h complementary digital logic. Hybrid amplifiers achieved 8-10 dB of gain at 2.4 GHz and 1 mW DC bias level. The RFIC achieved 10 dB of gain at 2 4 GHz and 2 mW DC bias level.Introduction: Low power circuitry is very important for battery powered e1e:ctronic components. While low power operation of digital circuitry is taken for granted due to the unique advantages offered by CMOS architecture, microwave circuits have no equivalent low power circuit configuration, require quiescent bias, and consequently have been reported infrequently in the literature. Commercial GaAs MESFET foundry technology was used to design and fabricate an amplifier with 15dB of gain for 2-stages with 0.8 mW power at 1.25 GHz [l]. An HFET (heterostructure field effect transistor) amplifier RFIC (radio frequency integrated circuit) achieved 10 dB of gain at 0.5 niW and 900 MHz [2]. Amplifiers that operate at the 1 m W power level or lower have not been reported previously at higher frequencies. Microwave gain and return loss measurements were performed using an HP 8510C network analyzer using Cascade Microtech microwave probes calibrated using a TRL calibration. S-parameters were measured at wafer level and used to design a narrow-band 2.4 Experimental Hybrid AmplifierGHz microsmp based amplifier. Amplifiers were fabricated on Rogers TMM-10 25 mil thick substrates. The measured gain vs. frequency is plotted in Figure 2 far three amplifiers using chip and wire assemblies. Peak gains between 8 and 10 dB were measured at 2.4 GHz and 1 mW DC power.JFET RFIC: The hybrid amplifier was subsequently redesigned and fabricated as a RFIC with on-chip matching. The chip dimensions are 2.8 x 2.3 mm2. After fabrication the RFIC was silver epoxied to a metal substrate along with chip capacitors for bias stability and alumina microsmp circuit adapters to facilitate microwave probing. The W l C was designed for off chip bias control of the gate and drain so that it could be tested under various bias conditions. Shown in Figure 3 are plots of the gain (10 dB peak at 2.45GHz, and input/output return loss (< -15 dB at 2.45 GHz) all measured at 2 mW I>C bias condition (VDS = 2 V, ID = 1 mA). At 1 mW the gain drops to 7-8 dB. Good agreement with the earlier hybrid amplifier and the RFIC design goals was achieved. 3Conclusion: Low power microwave technology results have been presented for 0.7 pn GaAs JFETs which are compatible with a digital CHFET technology. Both discrete and RFIC amplifiers were demonstrated which achieved 8-10 dB of gain at 2.4 GHz with 1-2 mW of DC power consumption. Acknowledgments:The authors would like to thank Geraldine Lopez, Melissa Cavaliere,

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Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4 GHz

et al. 1999

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“…Tipicamente, na faixa de operação até 20 GHz há o predomínio de circuitos de GaAs com MESFET, enquanto o HEMT predomina nas freqüências maiores. Contudo, os dispositivos HEMTs vêm ganhando espaço em algumas aplicações na faixa de freqüências de comunicação sem fio por dois motivos(NAIR et al, 1995):• Transcondutância superior ao do MESFET e do MOSFET -Permite obter circuitos com o mesmo desempenho, mas com um consumo de potência bem menor.• Comportamento de ruído, no mínimo, igual ou superior.Assim, já prevendo esta aplicação dos HEMTs nos dias atuais e a necessidade de investigação de novas topologias de misturadores em Célula de Gilbert para o explosivo crescimento das comunicações sem fio, estabeleceu-se, em 1997, o seguinte tema para investigação: Projeto de Misturador com topologia Célula de Gilbert utilizando pHEMT.O principal objetivo deste trabalho foi estudar a viabilidade do uso de HEMTs em circuitos misturadores que utilizam a configuração Célula de Gilbert e que operam na faixa de comunicação móvel.No ano em que este trabalho começou, existia somente um trabalho publicado no IEEE Microwave and Guided Wave Letters, no qual se propunha um multiplicador analógico distribuído utilizando HEMT de InP(IMAI et al, 1994). Neste circuito, duas Células de Gilbert são utilizadas como unidades da estrutura distribuída.…”

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Projeto de misturador com topologia celula de Gilbert utilizando pHEMT

Martins¹,

Swart²

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Este trabalho demonstra a viabilidade do uso da tecnologia PHEMT em misturadores com topologia Célula de Gilbert. A análise é feita através da simulação, implementação e medição do circuito integrado de microondas monolítico de um misturador conversor para baixo.A topologia do circuito utilizada na integração é uma implementação da topologia Micromixer (variante da topologia clássica) e proposta pela primeira vez em tecnologia pHEMT. O circuito é caracterizado na freqüência 1,9 GHz para RF, 2,0 GHz para OL e 100 MHz para FI, mostrando ganho de conversão de tensão de 14,8 dB. As principais vantagens apresentadas pelo circuito foram: entrada de RF desbalanceada, bom desempenho de ruído (NF SSB =14,4 dB), IIP3 relativamente alto (1,5 dBm) e baixo consumo de potência (17 mW para o bloco misturador).

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