2001
DOI: 10.1016/s0925-4005(01)00786-9
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Low power gas detection with FET sensors

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Cited by 127 publications
(70 citation statements)
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“…The concept was developed either by conserving the initial standard structure (conducting sensitive gate deposited on the top of the transistor channel) or by changing it (e.g. sensitive gate separated by an air gap from the channel [2]) in the attempt to gain more flexibility. The latter version, suggestively named suspended gate field effect transistor (SG-FET), allows for the use of a larger number of materials and preparation methods for the sensitive gate, which is fabricated in a separate process.…”
Section: Introductionmentioning
confidence: 99%
“…The concept was developed either by conserving the initial standard structure (conducting sensitive gate deposited on the top of the transistor channel) or by changing it (e.g. sensitive gate separated by an air gap from the channel [2]) in the attempt to gain more flexibility. The latter version, suggestively named suspended gate field effect transistor (SG-FET), allows for the use of a larger number of materials and preparation methods for the sensitive gate, which is fabricated in a separate process.…”
Section: Introductionmentioning
confidence: 99%
“…The voltage is applied across the gate and drain terminal which will generate electric field which results in the conductivity of the transistor. When a polar compound and the gate metal interacts, it generates electric field and respond is recorded by the transistor [13,14]. The gate can be either thick (100-200 nm)or thin (6-20 nm).…”
Section: Metal-oxide Semiconductor Field Effect Transistor Sensormentioning
confidence: 99%
“…With this in mind, hydrogen gas sensors, such as those of the field effect transistor (FET) type and Schottky diode type, etc., have been reported for the detection of hydrogen leakage [1][2][3][4][5][6] .…”
Section: Introductionmentioning
confidence: 99%