2008
DOI: 10.1117/1.3013549
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Low-power electrothermal actuation for microelectromechanical systems

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Cited by 7 publications
(7 citation statements)
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“…If the material is prevented from expanding the stress experienced can be obtained by combining equations (10) and (11) [23]:…”
Section: Electro-thermal Tuningthermal Stressmentioning
confidence: 99%
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“…If the material is prevented from expanding the stress experienced can be obtained by combining equations (10) and (11) [23]:…”
Section: Electro-thermal Tuningthermal Stressmentioning
confidence: 99%
“…Electro-static excitation is a widely used technique for MEMS actuation allowing more flexible structures' geometries [7]. Despite a slower response and higher power consumption compared to electro-static techniques, electrothermal excitation is considered a good solution to overcome major drawbacks such as critical fabrication steps, impedance matching and relatively high actuation voltages that are typical of electro-static transduction [11]. Si resonators actuated electro-thermally have shown good performance as MEMS filters [12].…”
mentioning
confidence: 99%
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“…However, active methods are demonstrated only for electrothermally [1], [3] and electrostatically actuated [4]- [6] MEMS resonators. Electrothermal actuation is considered a good solution to overcome major drawbacks of electrostatic actuation such as Manuscript critical fabrication steps, impedance matching, and relatively high actuation voltages, but it suffers due to slow response and high power consumption [7]. In contrast, the high efficiency of magnetic actuation significantly reduces the required operation power and allows for the use in portable devices.…”
Section: Introductionmentioning
confidence: 99%
“…A DRIE process enables high-aspect ratio, deep etching of features in silicon wafers using repeated cycles of conformal polymer deposition, ion sputtering, and chemical etching of the silicon. DRIE can be performed on both the device and substrate layers in order to pattern thermal microactuators from the device layer and remove the substrate underneath the microactuators (Milanović, 2004) to reduce heat loss and required power during operation (Skinner et al, 2008). Typically a metal layer is deposited on top of the device layer to improve electrical connections when the parts are packaged.…”
Section: Silicon-on-insulator Processingmentioning
confidence: 99%