Low power deposition of the polycrystalline CuxO film with a high mobility and a low hole concentration by radio-frequency magnetron sputtering of a Cu2O target

Hsu, Chih-Chieh; Wu, Chien-Hsun; Wang, Siang-Yu

doi:10.1016/j.jallcom.2015.12.112

Cited by 19 publications

(3 citation statements)

References 47 publications

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“…These are the basic characteristics of a proper solar selective absorber 25 . In order to estimate the bandgap of the CuO thin films, first, the transmittance (T) and reflectance (R) experimental data were converted to the absorption coefficient (α) via the following equation: (4) where t is thickness 3,26 . The optical bandgap (E g ) and absorption coefficient are directly related via the Tauc relation: (5) where hυ is the photon energy, A is an energy independent constant, and n is ½ for direct allowed transition.…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…CuO with its monoclinic structure naturally exhibits p-type conductivity and the band gap values of 1.3-2.1 eV has been reported in literatures 3 . The possibility of depositing CuO with almost all conventional methods, such as sputtering 4 , sol-gel 5 , chemical vapor deposition 6 , thermal deposition 7 , can provide the groundwork for the deposition of CuO films with a wide variety of characteristics. However, the main drawback of the most sophisticated methods is the fact that they require highly expensive devices and processes.…”

Section: Introductionmentioning

confidence: 99%

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Spray Deposited Nanostructured CuO Thin Films: Influence of Substrate Temperature and Annealing Process

Asl

Rozati

2018

Mat. Res.

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In this study, CuO thin films were deposited on glass substrates at a wide range of temperatures from 450ºC to 550ºC with steps of 25ºC by chemical spray pyrolysis technique. Aiming to investigate the effect of annealing process, one of the resulting films was annealed at 450ºC for 3 hours under ambient air. Based on X-ray diffraction, all the resulting films are monoclinic with two prominent peaks at ~36º and ~39º. The crystallite size of the CuO film deposited at 450ºC was found to be the largest in comparison with the others. As the substrate temperature increased, a gradual change was observed for the CuO thin film surface morphology and in the case of annealed film, the grains and their boundaries became indistinguishable. The resistivity of the films was reduced by virtue of increasing the substrate temperature and also, both the mobility and carrier concentration of the annealed film were improved drastically after annealing. As expected, the CuO thin films absorption was considerable in the visible region and gradually declined after 800nm. The estimated band gap value of the CuO film deposited at 450ºC were fairly close to the optimum band gap for solar applications.

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Section: Electrical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spray Deposited Nanostructured CuO Thin Films: Influence of Substrate Temperature and Annealing Process

Asl

Rozati

2018

Mat. Res.

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show abstract

“…Various deposition techniques have been deployed for the preparation of CuO thin films, such as chemical vapor deposition [6], magnetron sputtering [7], thermal oxidation [8], electrodeposition [9], sol-gel [10], and spray pyrolysis [11]. In this paper, we report the synthesis and characterization of CuO thin films by a simple sol-gel dip-coating technique.…”

Section: Introductionmentioning

confidence: 99%