Low-power continuous-wave four-wave mixing wavelength conversion in AlGaAs-nanowaveguide microresonators

Kultavewuti, Pisek; Pusino, Vincenzo; Sorel, Marc; Aitchison, J. S.

doi:10.1364/ol.40.003029

Cited by 17 publications

(19 citation statements)

References 25 publications

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“…The effective length is L eff = 2.8 mm. The nonlinear coefficient is assumed γ = 150 m −1 W −1 , which is consistent with a value observed in a waveguide of a similar structure fabricated using the same process [19]. This set of parameters yields a theory = 7.5 × 10 −3 pair/(pulse · W 2 ), and it matches really well with the experimental result.…”

Section: Discussionsupporting

confidence: 76%

“…The AlGaAs waveguide structure, whose compositional details can be found in [19], was In order to gauge the possible SFWM bandwidth of our device, we characterize the device using classical pump-degenerate four-wave mixing (FWM), as its bandwidth characteristics are related to that of the SFWM process [20]. In the classical domain, the generated idler power is expressed as [21] P cls…”

Section: Fabrication and Classical Characterizationmentioning

confidence: 99%

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Correlated photon pair generation in AlGaAs nanowaveguides via spontaneous four-wave mixing

Kultavewuti¹,

Zhu²,

Qian³

et al. 2016

Opt. Express

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Abstract:We demonstrate a source of correlated photon pairs which will have applications in future integrated quantum photonic circuits. The source utilizes spontaneous four-wave mixing (SFWM) in a dispersion-engineered nanowaveguide made of AlGaAs, which has merits of negligible two-photon absorption and low spontaneous Raman scattering (SpRS). We observe a coincidence-to-accidental (CAR) ratio up to 177, mainly limited by propagation losses. Experimental results agree well with theoretical predictions of the SFWM photon pair generation and the SpRS noise photon generation. We also study the effects from the SpRS, propagation losses, and waveguide lengths on the quality of our source.

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Section: Discussionsupporting

confidence: 76%

Section: Fabrication and Classical Characterizationmentioning

confidence: 99%

Correlated photon pair generation in AlGaAs nanowaveguides via spontaneous four-wave mixing

Kultavewuti¹,

Zhu²,

Qian³

et al. 2016

Opt. Express

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“…Figure 2(c) shows the measured transmission spectrum for the resonance at 1589.64 nm for the TE mode, and the measured linewidth is around 9.6 pm, which corresponds to a loaded Q of ∼165; 600. The measured loaded Q for all the devices ranges from 1.5 × 10 5 to 2.0 × 10 5 , which is more than an order of magnitude higher than previously demonstrated Q for AlGaAs micro-ring resonators [25]. The resonator works in the under-coupled regime, and its transmission over a 10 nm wavelength range is shown in Fig.…”

mentioning

confidence: 63%

Efficient frequency comb generation in AlGaAs-on-insulator

Ottaviano

Semenova

et al. 2016

Optica

283

199

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Desirable material properties for all-optical χ (3) nonlinear chips are a high Kerr nonlinearity and low linear and nonlinear losses to enable high four-wave mixing (FWM) efficiency and parametric gain. Many material platforms have been investigated showing the different trade-offs between nonlinearity and losses [2][3][4][5][11][12][13][14][15][16] . In addition to good intrinsic material properties, the ability to perform accurate and high yield processing is desirable in order to integrate additional functionalities on the same chip and also to decrease linear losses. Silicon-on-insulator is the model system for integration 2 . It supports a large index contrast and shallow etch depths, enabling patterning submicron structures with smooth sidewalls. However, due to two-photon absorption (TPA) at telecom wavelengths, 19 . Its bandgap can be tailored in such a way that TPA, which is the main detrimental effect for the FWM process, is mitigated and at the same time, the three-photon absorption is low 10 while a high material nonlinearity is maintained. Over the past two decades, efforts have been made to realize efficient nonlinear processes in AlGaAs waveguides [17][18][19] . However, the fabrication of such waveguides with very high and narrow mesa structures becomes very challenging and prevents advanced designs that go beyond simple straight waveguides. In addition, the low vertical index contrast of such waveguides limits the effective nonlinearity.To enhance light confinement and relax the etching process requirements, we propose an AlGaAs-on-insulator (AlGaAsOI) platform as shown in Fig. 1a. In this layout, a thin AlxGa1-xAs layer on top of a low index insulator layer resides on a semiconductor substrate. Wafer bonding and substrate removal are used to realize the structure. In this letter, the aluminium fraction (x) is 17%, which makes the material bandgap 1.63 eV and the refractive index 3.33. Thanks to the large index contrast (~55%) of this layout, light can be confined in a sub-micron waveguide core. As the nonlinear parameter (γ) is highly dependent on the waveguide effective mode area (Aeff) as expressed 2 by γ=2πn2/λAeff, an ultra-high effective nonlinearity of about 660 W -1 m -1 , which is orders of magnitude higher than that of a typical Si3N4 waveguide 5 , can be obtained for an AlGaAsOI waveguide using a cross-section dimension of 320 nm×630 nm (see Methods). In addition, the waveguide dispersion dominates over material dispersion for subwavelength sized waveguides and therefore the group velocity dispersion (GVD) can be engineered from the normal dispersion of bulk material to anomalous dispersion (Fig. 1b), which is required to achieve parametric gain in nonlinear processes in the under-coupled regime and its transmission is shown in Fig. 2c for the transverse electric (TE) mode. Only one mode family with a free spectral range (FSR) of ~0.82 nm (98 GHz) is observed in the spectrum, which implies that the resonator waveguide with anomalous dispersion can be operated in a single-mode state....

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“…The intrinsic Qs we can extracted from the measurement are ~4.9×105 and ~6.9×105, respectively, for 630-nm and 900-nm wide waveguides. The demonstrated Q of the AlGaAsOI microresonators is more than one order of magnitude higher than that has been previously reported [10]- [12].…”

Section: Aluminum Gallium Arsenide-on-insulator Platformmentioning

confidence: 58%

“…However, because of the high aspect ratio of the waveguide, more advanced designs than straight waveguides such as microring resonators with integrated waveguides are still challenging to realize with high performances. The highest achieved quality factors (Q) of deep-etched AlGaAs microring resonators are at a very low level (<10 4 ) [10]- [12]. In addition, the low vertical index-contrast of such AlGaAs waveguides severely limit its effective nonlinearity in spite of a high material nonlinearity.…”

Section: Introductionmentioning

confidence: 99%

Nano-engineered high-confinement AlGaAs waveguide devices for nonlinear photonics

Zheng

Stassen

et al. 2018

Nanophotonics VII

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The combination of nonlinear and integrated photonics enables applications in telecommunication, metrology, spectroscopy, and quantum information science. Pioneer works in silicon-on-insulator (SOI) has shown huge potentials of integrated nonlinear photonics. However, silicon suffers two-photon absorption (TPA) in the telecom wavelengths around 1550 nm, which hampers its practical applications. To get a superior nonlinear performance, an ideal integrated waveguide platform should combine a high material nonlinearity, low material absorption (linear and nonlinear), a strong light confinement, and a mature fabrication technology. Aluminum gallium arsenide (AlGaAs) was identified as a promising candidate for nonlinear applications since 1994. It offers a large transparency window, a high refractive index (n≈3.3), a nonlinear index (n2) on the order of 10 -17 m 2 W −1 , and the ability to engineer the material bandgap to mitigate TPA. In spite of the high intrinsic nonlinearity, conventional deep-etched AlGaAs waveguides exhibit low effective nonlinearity due to the vertical low-index contrast. To take full advantage of the high intrinsic linear and nonlinear index of AlGaAs material, we reconstructed the conventional AlGaAs waveguide into a high index contrast layout that has been realized in the AlGaAs-on-insulator (AlGaAsOI) platform. We have demonstrated low loss waveguides with an ultra-high nonlinear coefficient and high Q microresonators in such a platform. Owing to the high confinement waveguide layout and state-of-the-art nanolithography techniques, the dispersion properties of the AlGaAsOI waveguide can be tailored efficiently and accurately by altering the waveguide shape or dimension, which enables various applications in signal processing and generation, which will be reviewed in this paper.

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Low-power continuous-wave four-wave mixing wavelength conversion in AlGaAs-nanowaveguide microresonators

Cited by 17 publications

References 25 publications

Correlated photon pair generation in AlGaAs nanowaveguides via spontaneous four-wave mixing

Correlated photon pair generation in AlGaAs nanowaveguides via spontaneous four-wave mixing

Efficient frequency comb generation in AlGaAs-on-insulator

Nano-engineered high-confinement AlGaAs waveguide devices for nonlinear photonics

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