Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO

Jia, Menghan; Wang, Fang; Tang, Libin; Xiang, Jinzhong; Teng, Kar Seng; Lau, Shu Ping; Lu, Yijun

doi:10.1016/j.optlastec.2022.108634

Cited by 19 publications

(6 citation statements)

References 38 publications

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“…The demonstration PDs were evaluated for such things as dark current, R , EQE, and D *. The performances of the ZnO/NiO PD and ZnO NWs/ZnO/NiO PD are compared with those of recently reported PDs with similar structures, as shown in Table . − It is clear that the represented ZnO NWs/ZnO/NiO PD has a good comprehensive performance. This work supports the broader application of the light-trapping effect of NWs in a heterostructure and offers novel insights into the development of practical, miniaturized self-powered UV PDs.…”

Section: Resultsmentioning

confidence: 94%

Enhanced Light Trapping in ZnO Nanowire Arrays/NiO Heterojunction for Self-Powered Photodetection

Wang,

Liu,

Jiang

et al. 2024

Crystal Growth & Design

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Self-powered ultraviolet (UV) photodetectors (PDs) based on a ZnO/NiO heterojunction have garnered increasing interest due to their straightforward preparation process, exceptional photoresponse performance, and independence from external power sources. However, PDs' detection capabilities are hindered by a high concentration of defects and low carrier mobility within a heterojunction. In this study, the integration of ZnO nanowire (NW) arrays featuring light-trapping structures is explored with heterostructured thin films to optimize the optical functional layer's structure. The resulting ZnO NWs/ZnO/NiO heterojunction PDs, fabricated via RF magnetron sputtering and hydrothermal methods, exhibit significant optoelectronic behavior when exposed to light, functioning autonomously without the need for an external power supply. The synergistic effect of the heterojunction and the light-trapping structure significantly enhances the PD's overall performance. The optimized heterojunction PD demonstrates superior responsivity, detectivity, lower noise equivalent power, and enhanced external quantum efficiency. This work supports the broader application of the light-trapping effect of NWs in a heterostructure and offers novel insights into the development of practical, miniaturized self-powered UV PDs.

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Section: Resultsmentioning

confidence: 94%

Enhanced Light Trapping in ZnO Nanowire Arrays/NiO Heterojunction for Self-Powered Photodetection

Wang,

Liu,

Jiang

et al. 2024

Crystal Growth & Design

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“…The M 2 factor of 902 nm emission is 1.56 at the maximum output power. In fact, the Nd:ASL solidstate lasers operating around 0.9 µm have been already reported in the last few years [5,[23][24][25]. In all these reports, Jing Xia reported a 11.2 W 902 nm Nd:ASL laser, till now the output power of which represents the highest level [5].…”

Section: Experimental Setupsmentioning

confidence: 96%

Tunable Yb:GdCOB self-frequency-doubling cyan laser

Du,

Hu,

et al. 2024

Laser Phys. Lett.

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We report a solid-state laser-pumped Yb:GdO(BO3)3 (Yb:GdCOB) tunable self-frequency-doubling continuous wave (CW) cyan laser. By adjusting the pump power, a CW cyan laser emission was obtained with wavelengths shifting from 502 nm to 506 nm. The highest output power of 835 mW was achieved at an emission wavelength with an optical conversion efficiency of 5.8%. To the best of our knowledge, there have been no studies of the self-frequency-doubled Yb:GdCOB lasers at the cyan wavelength. This work provides a novel method to generate tunable solid-state lasers with a compact and simple structure.

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“…Near-infrared wavelength lasers are widely applied in the fields of unmanned aerial vehicle, light detection and ranging, remote sensing, double frequency and laser medical apparatus. Yb 3+ ions have been considered as a compelling dopant of solid-state laser materials [1][2][3][4][5]. The Yb 3+ -doped crystals have been deeply analyzed and researched because of their superior performance in the near infrared spectra [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Quasi-three-level laser pumped Yb:GdCOB tunable laser from 1030 to 1036 nm

Wang,

Zhang,

2024

Laser Phys.

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We report a quasi-three-level laser pumped Ca4GdO(BO3)3 (Yb:GdCOB) tunable laser based on the transition from the 2 F 5/2 level to the 2 F 7/2 level. By adjusting the 902 nm pump power, a continuous waves Yb:GdCOB laser was obtained with the near-infrared wavelengths shifting from 1030 nm to 1036 nm. The highest tuning power of 2.5 W was achieved with a slope efficiency of 19.9%. To our knowledge, it is the first tunable Yb:GdCOB laser to be realized by adjusting the pump power. This work provides a novel method to generate tunable solid-state lasers with a compact and simple structure.

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Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO

Cited by 19 publications

References 38 publications

Enhanced Light Trapping in ZnO Nanowire Arrays/NiO Heterojunction for Self-Powered Photodetection

Enhanced Light Trapping in ZnO Nanowire Arrays/NiO Heterojunction for Self-Powered Photodetection

Tunable Yb:GdCOB self-frequency-doubling cyan laser

Quasi-three-level laser pumped Yb:GdCOB tunable laser from 1030 to 1036 nm

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