Abstract:In this study, a design guideline for a modified low-power wideband on-chip amplitude modulator (AM) based on independently driven double-gate metal-oxide-semiconductor field-effect transistor (IDDGMOS) is proposed. The AM performance is then analysed for three different types of underlap engineered IDDGMOS devices. It is observed that the modulator designed with IDDGMOS presents a higher gain and bandwidth for lower power input signals. For analysing the gain-bandwidth performance of the modulator circuit, a … Show more
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