Low‐power 0.13‐μm CMOS receiver for microwave Doppler sensor

Abstract

In this article, we present the design and fabrication of a monolithic microwave‐integrated circuit (MMIC) using 0.13‐μm complementary metal‐oxide‐semiconductor (CMOS) radiofrequency (RF) process for a low‐noise amplifier (LNA) and a passive down mixer for a microwave Doppler sensor receiver operating in the 24‐GHz band (K band). The low‐noise amplifier uses a single‐stage cascode structure to ensure a small size and gain suitable for a microwave Doppler sensor. The down mixer has a passive frequency mixer structure and a single balanced design using balun for the local oscillator (LO) input. The output of the LNA and the input of the down frequency mixer are conjugately matched to minimize the flicker noise generated by the receiver for the microwave Doppler sensor. The designed MMIC showed a voltage conversion gain of 14.46 dB and an input P1dB of −21.16 dBm when the LO power was 0 dBm within the IF range (0.01‐1 GHz). A noise figure of less than 19.24 dB was obtained. The MMIC area and the power consumption were 0.647 × 0.363 mm2 and 6 mW, respectively.