Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz

Kuhnert, H.; Lenk, F.; Hilsenbeck, J.; Würfl, Joachim; Heinrich, W.

doi:10.1109/mwsym.2001.967198

Cited by 18 publications

(4 citation statements)

References 14 publications

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“…The active elements are GaInP/GaAs HBTs. For further details see [4]. Extremely high f max values (beyond 170 GHz at V CE =3 V) are achieved compared to the more industry-standard f T values (36 GHz at V CE =3 V).…”

Section: Hbt Technologymentioning

confidence: 96%

A Dual Stage GaAs Amplifier for a K-Band Direct Receiver

Huber

Mark

Boeck

2006

2006 13th IEEE International Conference on Electronics, Circuits and Systems

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An energy efficient K-band GaAs-HBT amplifier applicable in a highly integrated direct receiver concept for sensor networks is presented. The preamplifier in a direct receiver is the most important building block and mainly determines sensitivity and energy consumption. Special issues of the amplifier design related to the receiver concept are highlighted in this paper. The presented amplifier shows gain of 14 dB and a noise figure of 6 dB using 47 mW DC supply.

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Section: Hbt Technologymentioning

confidence: 96%

A Dual Stage GaAs Amplifier for a K-Band Direct Receiver

Huber

Mark

Boeck

2006

2006 13th IEEE International Conference on Electronics, Circuits and Systems

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“…[3]), single transistor oscillators are clearly preferred. [3]), single transistor oscillators are clearly preferred.…”

Section: The Circuits 31 Voltage-controlled Oscillator (Vco)mentioning

confidence: 99%

Integrated Circuits and 3D-Packaging for Low-Power 24 GHz Front End

Meliani¹,

Talukder²,

Hilsenbeck³

et al. 2004

Frequenz

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Design and experimental results for a low-power monolithic 24 GHz front end are described. As basic circuits, VCO and mixer are presented. The circuits are realized on GaAs using heterobipolar transistors. The VCO reaches 19% efficiency at 4.3 dBm output power and 14.5 mW DC power consumption. The circuits are to be integrated together with a special slot antenna using flip-chip technology. Simulatbn data on this novel antenna approach demonstrate acceptable gain characteristics around 3 dB, despite of its small size. Übersicht Der Beitrag beschreibt Simulationen und experimentelle Resultate zu einem monolithischen Frontend bei 24 GHz mit minimiertem Energieverbrauch. Als Grundschaltungen werden Ergebnisse zu VCO und Mischer vorgestellt, die auf GaAs mit Heterobipolartransistoren realisiert werden. Der VCO erreicht einen Wirkungsgrad von 19% bei 4.3 dBm Ausgangsleistung und 14.5 mW Leistungsverbrauch. Die Schaltungen sollen zusammen mit einer neuartigen Schlitzantenne integriert werden, die mit Hilfe der Flip-Chip-Technologie realisiert wird. Die Simulationsergebnisse zeigen trotz der Miniaturisierung einen akzeptablen Gewinn um 3 dB. Für die Dokumentation Millimeterwellenfrontend / VCO / Mischer / Schlitzantenne / Integration Brought to you by | Stockholms Universitet Authenticated Download Date | 7/7/15 10:03 AM

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“…The measured data refer to neighboring samples on the same wafer. For details of the technology see [1,2,3,4] Fig. 3 illustrates a standard measurement setup for frequency, power and noise measurements.…”

Section: Oscillator Examplementioning

confidence: 99%

On the Load-Pull Effect in MMIC Oscillator Measurements

Schott

Lenk

Heymann

2003

33rd European Microwave Conference, 2003

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Low phase-noise MMIC oscillators are key components for microwave and mm-wave systems. As a consequence, phase-noise measurements of these circuits have become a subject of growing interest and importance. This paper demonstrates that MMIC oscillator circuits with their relatively low Q factors are prone to specific measurement errors. Caused by a load-pull effect, the measurement system can become part of the oscillator, which yields phase-noise data significantly below reality. Special care has to be taken in order to avoid such phenomena.

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Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz

Cited by 18 publications

References 14 publications

A Dual Stage GaAs Amplifier for a K-Band Direct Receiver

A Dual Stage GaAs Amplifier for a K-Band Direct Receiver

Integrated Circuits and 3D-Packaging for Low-Power 24 GHz Front End

On the Load-Pull Effect in MMIC Oscillator Measurements

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