2016
DOI: 10.1063/1.4971828
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Low operational current spin Hall nano-oscillators based on NiFe/W bilayers

Abstract: Low operational current spin Hall nano-oscillators based on NiFe/W bilayers. Letters, 109(24) We demonstrate highly efficient spin Hall nano-oscillators (SHNOs) based on NiFe/b-W bilayers. Thanks to the very high spin Hall angle of b-W, we achieve more than a 60% reduction in the autooscillation threshold current compared to NiFe/Pt bilayers. The structural, electrical, and magnetic properties of the bilayers, as well as the microwave signal generation properties of the SHNOs, have been studied in detail. Our … Show more

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Cited by 66 publications
(50 citation statements)
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“…Prominent examples of such systems are the so-called nano-constriction 25,26 and nanowire 27,28 based spin Hall nano-oscillators [29][30][31] (SHNOs), where pure spin currents are injected from the heavy metal (such as Pt or W) to the adjoint ferromagnetic layer (e.g. NiFe or CoFeB).…”
Section: Introductionmentioning
confidence: 99%
“…Prominent examples of such systems are the so-called nano-constriction 25,26 and nanowire 27,28 based spin Hall nano-oscillators [29][30][31] (SHNOs), where pure spin currents are injected from the heavy metal (such as Pt or W) to the adjoint ferromagnetic layer (e.g. NiFe or CoFeB).…”
Section: Introductionmentioning
confidence: 99%
“…In certain materials (e.g. Pt [13], Ta [27] and W [28], [29]), the conversion ratio from charge to spin current, called spin-Hall angle (SHA) is large enough to exert a sufficient torque on an adjacent FL to excite magnetization precession. The three-terminal MTJ-SHNO architecture proposed in [16] is based on these principles where a Ta strip is providing spin injection into the FL.…”
Section: A Basic Operation Of Three-terminal Mtj-shnos With Vcmamentioning
confidence: 99%
“…As a flow of angular momentum that does not accompany a charge flow, pure spin currents carry information with minimum power dissipation [14]. More importantly, similar to spin-polarized current, pure spin currents are capable of manipulating the magnetization of ferromagnetic elements, showing promising application perspectives in alternative information recording and data processing devices such as spin orbital torque magnetic random access memory (SOT MRAM) [15] and spin Hall nano-oscillators [16]. In a ferromagneticnonmagnetic (FM NM) bilayer system, pure spin currents can be converted by charge current flowing through NM with strong spin orbit coupling (spin Hall effect), then propagate into the adjacent FM, thereby affecting the magnetic fluctuation, magnetization dynamics, and even magnetization switching [17][18][19].…”
Section: Introductionmentioning
confidence: 99%