Low open-area endpoint detection using a PCA-based T/sup 2/ statistic and Q statistic on optical emission spectroscopy measurements

White, David A.; Goodlin, Brian; Gower, Aaron E.; Boning, Duane S.; Chen, H.; Sawin, Herbert H.; Dalton, T.

doi:10.1109/66.843635

Cited by 48 publications

(28 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In plasma etching OES is often employed for fault detection as well as for end point detection. 35,36 Also during plasma-assisted ALD many faults can occur during the deposition process. Due to the high sensitivity of OES, these faults generally have a large influence on the optical emission signals.…”

Section: Process Monitoringmentioning

confidence: 99%

Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

Mackus¹,

Heil²,

Langereis³

et al. 2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes In this note it is demonstrated that optical emission spectroscopy ͑OES͒ is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition ͑ALD͒. The species in the plasma can be identified through the analysis of the light emitted by the plasma. OES provides therefore information on the reactant species delivered to the surface by the plasma but it also yields unique insight into the surface reaction products and, as a consequence, on the reaction mechanisms of the deposition process. Time-resolved measurements reveal information about the amount of precursor dosing and length of plasma exposure needed to saturate the self-limiting half reactions, which is useful for the optimization of the ALD process. Furthermore, time-resolved OES can also be used as an easy-to-implement process monitoring tool for plasma-assisted ALD processes on production equipment; for example, to monitor reactor wall conditions or to detect process faults in real time.

show abstract

Section: Process Monitoringmentioning

confidence: 99%

Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

Mackus¹,

Heil²,

Langereis³

et al. 2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…In the NIPALS implementation of PLS the recursive computation of the columns of T and U is done simultaneously with information exchanged between them at each step to ensure optimal alignment [2].…”

Section: Tbq Y =mentioning

confidence: 99%

“…For example, in the plasma etch process considered in this paper an OES derived dataset consisting of over 12000 input variables is available. The challenge is to extract from this data the key process characteristics and a model that reliably predicts the evolution of the process etch rate, a metrology variable that has a significant impact on manufacturing yield [2,3].…”

Section: Introductionmentioning

confidence: 99%

Identifying key process characteristics and predicting etch rate from high-dimension datasets

Ragnoli

McLoone

Lynn

et al. 2009

2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

View full text Add to dashboard Cite

-In semiconductor manufacturing advanced process control (APC) refers to a range of techniques that can be used to improve process capability. As the dimensions of electronic devices have decreased, the application of APC has become more and more important for the critical stages of production processes. However, the economic disadvantage of employing APC is that it requires feedback information in the form of downstream metrology data, which is both time consuming and costly to obtain.

show abstract

“…The main technique employed to date in this regard has been Principal Components Analysis (PCA). The literature on PCA applications in semiconductor manufacturing research is rather numerous, see for example [2], [3], [4] and [5]. In [3] PCA is applied for spatial characterisation of the wafer state.…”

Section: Introductionmentioning

confidence: 99%

“…In [3] PCA is applied for spatial characterisation of the wafer state. In [2] and [5] it is exploited for endpoint detection, while in [4] the focus is on fault detection.…”

Section: Introductionmentioning

confidence: 99%

Matrix Factorisation Techniques for Endpoint Detection in Plasma Etching

Ragnoli

McLoone

Ringwood

et al. 2008

2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

View full text Add to dashboard Cite

Abstract-Advanced data mining techniques such as variable selection through matrix factorization have been intensively applied in the last ten years in the area of plasma-etch point detection using optimal emission spectroscopy (OES). OES data sets are enormous, consisting of measurements of over 2000 wavelength recorded at sample rates of 1 − 3 Hertz, and consequently, these techniques are needed in order to generate compact representations of the relevant process characteristics.To date, the main technique employed in this regard has been PCA (Principal Components Analysis), a matrix factorisation technique which generates linear combinations of the original variables that best capture the information in the data (in terms of variance explained).Recently, an alternative matrix factorisation technique, NonNegative Matrix Factorisation (NMF) [1], has been gaining increasing attention in the fields of image feature extraction and blind source separation due to its tendency to yield sparse representations of data. The aim of this work is to introduce Non-Negative Matrix Factorisation to the semiconductor research community and to provide a comparison with PCA in order to highlight its properties.

show abstract

Low open-area endpoint detection using a PCA-based T/sup 2/ statistic and Q statistic on optical emission spectroscopy measurements

Cited by 48 publications

References 28 publications

Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

Identifying key process characteristics and predicting etch rate from high-dimension datasets

Matrix Factorisation Techniques for Endpoint Detection in Plasma Etching

Contact Info

Product

Resources

About