Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

Mori, Kazuki; Takeda, Kunihiro; Kusafuka, Toshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

doi:10.7567/jjap.55.05fl03

Cited by 35 publications

(25 citation statements)

References 20 publications

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“…In addition, Ti‐based electrodes have high ρ c to n‐type AlGaN with AlN molar fractions above 0.6 . We reported that V/Al/Ni/Au electrode realized low contact resistivity (∼10 −6 Ωcm 2 ) with n‐type AlGaN with AlN molar fraction of 0.62 . However, we confirmed contact resistivity for AlGaN with AlN molar fraction of 0.7 rapidly increased to 10 −3 Ωcm 2 order.…”

Section: Introductionmentioning

confidence: 45%

Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiN_x intermediate layer

Nagata

Senga

Iwaya

et al. 2016

Phys. Status Solidi C

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We found out the reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiNx intermediate layer. The contact resistivity for n‐type Al0.70Ga0.30N with the V/Al/Ni/Au electrode using SiNx intermediated layer reached 1.13 × 10−6 Ω cm2. Moreover, contact resistivity using SiNx intermediated layer had been reduced more than one order of magnitude in all AlN molar fractions from 0.62 to 0.87. Using this electrode, we also demonstrated UV light‐emitting diodes (LEDs) on n‐type Al0.70Ga0.30N underlying layer with an emission wavelength of approximately 283 nm. An operating LED voltage using a V/Al/Ni/Au electrode with SiNx intermediated layer was 3.3 V lower at 100 mA current injection than that without SiNx intermediated layer.

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Section: Introductionmentioning

confidence: 45%

Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiN_x intermediate layer

Nagata

Senga

Iwaya

et al. 2016

Phys. Status Solidi C

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“…To reduce the waste EL on this mechanism, an n-reflective contact was investigated [40]. The sheet resistance of the n-contact on Al x Ga 1−x N (x > 50%) was recorded to be around 10 −4 Ωcm 2 [122] using vanadium. The carrier concentration of the n-AlGaN layer and the electron mobility were reported [123].…”

Section: Interdigital Reflective N-contactmentioning

confidence: 99%

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

Nagasawa¹,

Hirano²

2018

Applied Sciences

184

111

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This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group. The background to the development of the current device structure on sapphire is described and the reason for using a (0001) sapphire with a miscut angle of 1.0° relative to the m-axis is clarified. Our LEDs incorporate uneven quantum wells (QWs) grown on an AlN template with dense macrosteps. Due to the low threading dislocation density of AlGaN and AlN templates of about 5 × 108/cm2, the number of nonradiative recombination centers is decreased. In addition, the uneven QW show high external quantum efficiency (EQE) and wall-plug efficiency, which are considered to be boosted by the increased internal quantum efficiency (IQE) by enhancing carrier localization adjacent to macrosteps. The achieved LED performance is considered to be sufficient for practical applications. The advantage of the uneven QW is discussed in terms of the EQE and IQE. A DUV-LED die with an output of over 100 mW at 280–300 nm is considered feasible by applying techniques including the encapsulation. In addition, the fundamental achievements of various groups are reviewed for the future improvements of AlGaN-based DUV-LEDs. Finally, the applications of DUV-LEDs are described from an industrial viewpoint. The demonstrations of W/cm2-class irradiation modules are shown for UV curing.

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“…Indeed, it was shown that using the traditional metal contact schemes of Ti/ Al/Ti/Au, one can form good Ohmic contacts to n-AlGaN only up to about 20% AlN mole fraction [99]. Other workers have demonstrated that vanadium-based contacts can form good Ohmic contacts to n-GaN [100,101] and also to n-AlGaN [102][103][104].…”

Section: Device Fabricationmentioning

confidence: 99%

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2017

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This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

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Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

Cited by 35 publications

References 20 publications

Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiN_x intermediate layer

Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiN_x intermediate layer

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

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Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

Cited by 35 publications

References 20 publications

Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiNx intermediate layer

Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiNx intermediate layer

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

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Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiN_x intermediate layer

Reduction of contact resistance in V‐based electrode for high AlN molar fraction n‐type AlGaN by using thin SiN_x intermediate layer