Low-noise Si/Si0.5Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications

Fallahnejad, Mohammad; Khodabakhsh, Amir; Amini, Amir; Vadizadeh, Mahdi

doi:10.1007/s00339-023-06546-9

Appl. Phys. A

2023

DOI: 10.1007/s00339-023-06546-9

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Low-noise Si/Si0.5Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications

Mohammad Fallahnejad

Amir Khodabakhsh

Amir Amini

et al.

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Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications

Khodabakhsh,

Amini,

Fallahnejad

2024

IEEE Trans. Nanotechnology

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Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications

Khodabakhsh,

Amini,

Fallahnejad

2024

IEEE Trans. Nanotechnology

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Low-noise Si/Si0.5Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications

Cited by 1 publication

References 35 publications

Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications

Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications

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