Low-noise properties of dry gate recess etched InP HEMTs

Duran, H.C.; Klepser, Bernd-Ulrich H.; Bächtold, W.

doi:10.1109/55.537082

Cited by 11 publications

(4 citation statements)

References 12 publications

(12 reference statements)

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“…The maximum g m of the wet-etched sample S wet is smaller than that of sample S 6:4 . This is probably due to the decrease in source resistance as a result of the elimination of the undercut [16] and the tighter gate recess [17] for sample S 6:4 . Samples etched with pure BCl 3 (i.e.…”

Section: Device Fabrication and Characterizationmentioning

confidence: 99%

Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs

Kuo

Lin

et al. 1998

Solid-State Electronics

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Section: Device Fabrication and Characterizationmentioning

confidence: 99%

Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs

Kuo

Lin

et al. 1998

Solid-State Electronics

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“…Si-, GaAs-and InP-based high electron mobility transistors (HEMTs) are more common choice for designing these modules. [1][2][3][4] However, these solid-state devices are susceptible to energy spikes because of having lower breakdown voltage and therefore, additional protection circuitries are required for avoiding such damages to subsystems.…”

Section: Introductionmentioning

confidence: 99%

“…The key requirement for designing of transceiver ( T x / R x ) circuitry in any communication system is that the transistors should have high frequency, high power, and low noise characteristics. Si‐, GaAs‐ and InP‐based high electron mobility transistors (HEMTs) are more common choice for designing these modules 1–4 . However, these solid‐state devices are susceptible to energy spikes because of having lower breakdown voltage and therefore, additional protection circuitries are required for avoiding such damages to subsystems.…”

Section: Introductionmentioning

confidence: 99%

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Verma,

Nandi

2023

Int J Numerical Modelling

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In this work, a comprehensive investigation on the noise performance of novel optimized back‐barrier engineered GaN based trigate HEMT (BB‐trigate HEMT), have been carried out using Sentaurus TCAD tool. The microwave‐frequency noise of the device has been analyzed using a Green's function approach, assessing the gate and drain noise spectral densities under different bias conditions such as off‐state, subthreshold state and on‐state condition. More importantly, the G‐R noise component in BB‐trigate HEMT is almost eliminated in comparison to conventional trigate HEMT (C‐trigate HEMT). This is due to use of AlGaN back‐barrier layer (BBL). Subsequently, for the first time, it is reported that the noise parameters such as noise resistance and overall noise figure are drastically reduced to ~22 mΩ and ~0.02 dB respectively at 10 GHz frequency for back‐barrier (BB) trigate HEMT having a scaled gate length of 100 nm. The proposed device shows prominent noise performance than conventional trigate HEMT and thereby, it is highly suitable for designing low noise amplifier for X‐band applications.

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“…These defects can have detrimental effects on the noise performance of dry etched transistors. Concerning the microwave channel noise, no significant difference between dry and wet etched InP HEMTs could be observed [3].…”

Section: Introductionmentioning

confidence: 88%

High performance InP-based HEMTs with dry etched gate recess for the fabrication of low-noise microwave oscillators

Duran

Ren²,

Py³

et al.

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH3636

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In this paper, a technology for the fabrication of high performance InP-based HEMTs using dry gate recess etching is reported. The dry etched devices show better uniformity and considerably reduced low-frequency noise compared to conventionally wet etched ones. As an application of the technology, a dielectric resonator oscillator (DRO) operating in the frequency range of 23.2-24.8 GHz was designed and fabricated using dry or wet etched InGaAs/InAlAs/InP HEMTs. An output power of 12 dBm and a phase noise of -107 dBc/Hz at 100 kHz offset from the carrier were measured for DROs with dry etched HEMTs. These values were superior by nearly 10 dB to those obtained with conventionally wet etched devices. The reduction in phase noise is attributed to hydrogen trap passivation during dry gate recess etching with a methane/hydrogen plasma.

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Low-noise properties of dry gate recess etched InP HEMTs

Cited by 11 publications

References 12 publications

Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs

Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

High performance InP-based HEMTs with dry etched gate recess for the fabrication of low-noise microwave oscillators

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