1991
DOI: 10.1002/ecjb.4420740501
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Low noise MMIC amplifiers using HEMTs

Abstract: A 12‐GHz band, two‐stage monolithic HEMT (high‐electron mobility transistor) low‐noise amplifier and a broadband monolithic HEMT distributed amplifier have been developed. The HEMTs used in the amplifiers have a gate length of 0.5 μm and show a typical noise figure of 1.0 dB at 12 GHz. A noise figure of the two‐stage amplifier is less than 1.7 dB with a gain over 15.0 dB in the frequency range from 11.7 to 12.7 GHz. A noise figure of the distributed amplifier is less than 6.2 dB and gain of 7 ± 0.9 dB in the f… Show more

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“…Stabilization by series feedback using an inductive element between the source of an e it makes FET and the ground is the most suitable the optimum source impedance for the mi noise and that for the maximu ., impedance matching) close to each other [24], [ technique has b ed \ to practical low-noise s [28]- [30] so as ve input impedance matching. The magnitude of series inductive feedback, however, reduces as frequency decreases.…”
Section: A Stabilization Technique For a Low-noise Amplz$ermentioning
confidence: 99%
“…Stabilization by series feedback using an inductive element between the source of an e it makes FET and the ground is the most suitable the optimum source impedance for the mi noise and that for the maximu ., impedance matching) close to each other [24], [ technique has b ed \ to practical low-noise s [28]- [30] so as ve input impedance matching. The magnitude of series inductive feedback, however, reduces as frequency decreases.…”
Section: A Stabilization Technique For a Low-noise Amplz$ermentioning
confidence: 99%