Low-noise millimetre-wave mixer diodes: results and evaluation of a test programme

Keen, N.J.

doi:10.1049/ip-i-1.1980.0039

Cited by 5 publications

(1 citation statement)

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“…l~~~Rs en t c ircu it of a Schottky barr ier Rs diode (a) and the same circuit in a series representation (b). [2,6]. The results also confirm observations reported by Aydinli and Mattauch [7] that the noise temperature is critically dependent on the chemical nature of the interface between the metal and the semiconductor.…”

Section: The Diode Modelsupporting

confidence: 89%

Characteristics of Millimeter-Wave Schottky Diodes with Microcluster Interface

Kollberg

Zirath

Schneider³

et al. 2006

13th European Microwave Conference, 1983

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We present experimental evidence that a single Schottky diode on GaAs is an agglomerate of paralleled microjunctions with different barrier heights and saturation currents. The current-voltage characteristic of the cluster breakes up into sections of exponentials with different slopes as one cools the diode from 300 K to 10 K. Noise measurements performed on cooled diodes at 4 GHz also confirm that a single device is a cluster of paralleled diodes.The model suggests a more complicated equivalent cicuit of the diode which can also explain some of the problems experienced in attempts to theoretically predict cooled mixer noise performance. It also explains why in some diodes the excess noise appears at lower currents levels than in other diodes, a phenomenon which seriously degrades the low noise performance of the mixer.

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Section: The Diode Modelsupporting

confidence: 89%