2017 Devices for Integrated Circuit (DevIC) 2017
DOI: 10.1109/devic.2017.8073962
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Low-noise CMOS differential-amplifier design using automated-design methodology

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Cited by 5 publications
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“…A change in the W and L of MOS transistors has a significant impact on the transistor specification parameters (i.e. the threshold voltage or channel length modulation parameter) [22], [23], which has affects the functional parameters of a Dickson charge pump.…”
Section: B Technological Process Imperfectnessmentioning
confidence: 99%
“…A change in the W and L of MOS transistors has a significant impact on the transistor specification parameters (i.e. the threshold voltage or channel length modulation parameter) [22], [23], which has affects the functional parameters of a Dickson charge pump.…”
Section: B Technological Process Imperfectnessmentioning
confidence: 99%
“…Transistors can be parametrically damaged in many different ways during technological processes. The most frequent parametric damage at the production stage is a deviation of the photolithographic mask [23]- [24]. This kind of error affects the parametric values of the transistor structurethe width (W) and length (L) of a channel.…”
Section: Production Imperfectnessmentioning
confidence: 99%